Search

AbstractPb0.6Sr0.4TiO3(PSrT) thin films were fabricated on perovskite buffer layers, La0.5Sr0.5CoO3(LSCO), La0.5Sr0.5MnO3(LSMO) and modified-SrTiO3on either the Si(100) wafer or the Pt/Ti/SiO2/Si substrates using pulsed-laser-deposition technique in the present work and ferroelectric as well as fatigue properties of the specimens were investigated. Polarization-electric field (P-E) measurements imply that PSrT films deposited upon LSCO and LSMO buffer layers exhibit different ferroelectric characteristics after repeated loading. Ferroelectric properties of PSrT films on various buffer layers are quite different and ferroelectric properties deteriorate quickly if the resistance of the buffer is high. PSrT films on oxide/Pt electrodes show ferroelectric properties with higher remanent polarization, lower coercive field and better fatigue-resistance than those of PSrT on an oxide electrode. It is easier to prepare high quality PSrT/LSMO/Pt than to fabricate PSrT/LSCO/Pt. Fatigue resistance of PSrT/LSMO/Pt is better than that of PSrT/LSCO/Pt, which can be attributed to the interfacial stress condition as well as atomic interdiffusion of the films.