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Locally-active memristors blessed with an edge-of-chaos domain, which can be destabilized for generating action potentials, are natural candidates for emulating biological neurons. Pinpointing the edge-of-chaos domain, where neuromorphic behaviors may occur, is important for studying neuromorphic dynamics of memristors. This paper proposes a short-cut method for locating the edge-of-chaos domains in two kinds of generic memristors, and in several typical memristive 1-port circuits using only the Jacobian matrix in terms of their equations. Taking the Chua Corsage Memristor (CCM) and several CCM-based memristive 1-port circuits as examples, we verify the proposed new methods, and calculates their edge-of-chaos domains. Also, we carry out a complete classification of all the parameter regions of the CCM and several CCM-based memristive 1-port circuits, namely the locally-passive, locally-active but unstable, and edge-of-chaos domains, under both voltage and frequency control. Near the calculated edge-of-chaos domain, we uncover some new neuromorphic behaviors. To confirm the physical interpretations and predictions of the edge-of-chaos theorem, this paper presents an inexpensive electronic circuit realization of the complete set of equations defining the CCM using only off-the-shelf circuit components. When this poor-man's memristor is connected to various linear passive R, L, C circuits, and a battery, the resulting circuit can be tuned to generate action potentials, and a garden variety of neuromorphic phenomena, including chaos. But the highlight of this paper is reserved for the CCM itself where the world's first oscilloscope picture of a contiguous self-intersecting triple-branch DC V–I curve of the CCM is displayed in real time. [ABSTRACT FROM AUTHOR]

The SrBaTiO3 (SBT) memristor is prepared using the monolayer SrBaTiO3 nano-film structure. In order to apply it into the nonlinear circuit design, the SBT memristor is modeled in the paper. The voltage-controlled physical model of the SBT memristor is established based on its working mechanism. Due to the difficulty in determining the accurate parameters of the voltage-controlled physical model, a flux-controlled mathematical model of the SBT memristor is proposed, and its equivalence relation with the voltage-controlled physical model is proved. Moreover, the parameters of the flux-controlled mathematical model are determined by means of the quadratic polynomial interpolation method using the experimentally measured voltage and current data of the SBT memristor. The simulated - characteristic curve using the flux-controlled mathematical model coincides well with the measured - characteristic curves. The result indicates that the flux-controlled mathematical model with the definite parameters can be used to characterize the behaviors of the physical SBT memristor and guide its application to nonlinear circuit design. [ABSTRACT FROM AUTHOR]

In recent years, memristor has become one of the research focuses. Considerable open literature has shown that many devices and systems possess memristive properties. Thus, research into supplying power source to these special devices and making them work steadily has been a meaningful study. This paper investigates the slow-scale instability whose oscillating frequency is between the line frequency and the switch frequency that occurs in a voltage controlled H-bridge inverter with memristive load. The mechanism of this medium-frequency oscillation is identified via harmonic balance method and Floquet theory. The results show that it is due to the occurrence of Hopf bifurcation. Finally, experimental results are presented to verify the theoretical analysis. [ABSTRACT FROM AUTHOR]