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Summary: In this paper, a low‐power low‐noise complementary metal‐oxide semiconductor (CMOS) receiver RF front‐end (RFFE) that employs a current‐reuse Q‐boosted resistive feedback low‐noise amplifier (RFLNA) is proposed for 401 to 406 MHz medical device radio‐communication service band IoT applications. By employing a series RLC input matching network, the proposed RFLNA has the advantages of both the conventional RFLNA and the inductively degenerated common‐source LNA without using large on‐chip spiral inductors at the sources of the main transistors. The proposed active mixer utilizes a current‐reuse transconductor, in which a p‐channel metal‐oxide semiconductor (PMOS) transistor performs a current‐bleeding function to reduce direct current (DC) and flicker noise in the switching stage of the active mixer. The proposed receiver RFFE is implemented in a 65‐nm CMOS process and achieves a voltage gain of 30.9 dB, noise figure of 4.1 dB, S11 of less than −10 dB, and IIP3 of −22.9 dBm. It operates at a supply voltage of 1 V with bias currents of 360 μA. The active die area is 0.4 mm × 0.35 mm. [ABSTRACT FROM AUTHOR]

A 1.9-GHz single-stage differential stacked-FET power amplifier with uniformly distributed voltage stresses was implemented using 0.32-μm 2.8-V thick-oxide MOSFETs in a 0.18-μm silicon-on-insulator CMOS process. The input cross-coupled stacked-FET topology was proposed to evenly distribute the voltage stresses among the stacked transistors, alleviating the breakdown and reliability issues of the stacked-FET power amplifier in sub-micrometer CMOS technology. With a 4-V supply voltage, the proposed power amplifier with an integrated output coupled-resonator balun showed a small-signal gain of 17 dB, a saturated output power of 26.1 dBm, and a maximum power-added efficiency of 41.5% at the operating frequency. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]