1. Performance improvement of DC‐DC converter using L‐D‐based modified GaN‐FET driver.
- Author
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Santra, Subhendu Bikash, Roy, Aratrika, Roy Choudhury, Tanmoy, Chatterjee, Debashis, and Nayak, Byamakesh
- Subjects
ROTARY converters ,METAL oxide semiconductor field-effect transistors ,MODULATION-doped field-effect transistors ,ELECTRIC current rectifiers ,CAPACITORS - Abstract
Summary: Bootstrap capacitor in FET gate driver plays an important role in the transient performance of the half bridge configured synchronous buck DC‐DC converter especially in the top switch. In this paper, a new bootstrap capacitor based GaN‐FET driver is proposed. This new GaN‐FET driver is tested in a synchronous buck converter for performance verification like dvdt immunity, transient response, and voltage ringing. A comparison study with the existing LM5113 (Texas Instrument)–based driver for GaN‐FET and IR2110‐based Si‐MOSFET driver on a DC‐DC converter is carried out to show the performance improvement using the proposed GaN‐FET driver. The simulation study is performed on spice‐based NI‐Multisim 14.1. Finally, the designed GaN‐FET driver is tested on a 60‐W synchronous buck DC‐DC converter in open‐loop and closed‐loop configuration. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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