1. Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.
- Author
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Zeinali, Behzad, Madsen, Jens Kargaard, Raghavan, Praveen, and Moradi, Farshad
- Subjects
STATIC random access memory ,RANDOM access memory ,INTEGRATED memory circuits ,INTEGRATED circuits ,COMPLEMENTARY metal oxide semiconductors - Abstract
A novel sub-threshold 9 T Static Random Access Memory (SRAM) cell designed and simulated in 14-nm FinFET technology is proposed in this paper. The proposed 9 T-SRAM cell offers an improved access time in comparison to the 8 T-SRAM cell. Furthermore, an assist circuit is proposed by which the leakage current of the proposed SRAM cell is reduced by 20% when holding '0' and an equal leakage current during hold '1' in comparison to the 8 T-SRAM cell. The proposed circuit improves the access time by 40% in comparison to the 8 T-SRAM cell without any degradation in write and read noise margins, as well. The maximum operating frequency of the proposed SRAM cell is 1.53 MHz at V
DD = 270 mV. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]- Published
- 2017
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