1. Electronic interfacial thermal conductance between metal nano-films in sub-picosecond non-equilibrium transport process.
- Author
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Li, Gen, Zhang, Zhongyin, Li, Donghao, Zhu, Jie, and Tang, Dawei
- Subjects
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THERMAL plasmas , *THERMAL electrons , *ELECTRON transport , *METALLIC films , *METALS , *ELECTRONIC equipment - Abstract
• Thermal transport across metal interfaces was measured at the non-equilibrium states. • The measured h ee of Au/Pt matches well with the predicted value by electronic DMM. • Oxide layer significantly hinder electron thermal transport across metal interfaces. Interfaces play a critical role in nanoscale thermal transport, and understanding thermal transport mechanisms across metal/metal interfaces at the non-equilibrium states is urgently needed for highly integrated electronic structures or devices. In this work, the electronic interfacial thermal conductance h ee of two metal interfaces, Au/Pt and Au/Al, was measured by time domain thermoreflectance (TDTR) at the non-equilibrium states and an extended two-temperature model was applied to well describe the interactions of electrons between the metal films. For the Au/Pt structure, the measured h ee is 4.4 ± 1.8 GWm−2K−1, which is consistent with the predicted value by the electronic diffuse mismatch model (DMM). While for the Au/Al structure, the measured h ee (0.13±0.05 GWm−2K−1) is an order of magnitude smaller than that of Au/Pt and the predicted value of the electronic DMM. The results indicate that even the extremely thin oxide layer at the Au/Al interface can significantly hinder the electron thermal transport across the metal interface. Overall, our findings contribute to revealing the non-equilibrium interfacial thermal transport mechanisms and pave the way for designing the highly integrated electronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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