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This paper focuses on the simulation and optimization of electrical and optical properties such as current density-voltage (J-V), external quantum efficiency (EQE) and the photoluminescence spectra (PL) of InSb/GaAs quantum dot solar cell (QDSC). The InSb QDs have been inserted in the intrinsic region of p-i-n GaAs solar cell. Our results have been shown that 30 InSb/GaAs QD layers provide a relative enhancement of 22.35% and 29.30% of the short-circuit current and the efficiency, respectively. With the same number of the QD layers, the absorption range edge of low energy photons has been extended from 900 to 1400 nm. The electrical features obtained for InSb/GaAs QDSC have been compared with those obtained for InAs/GaAs QDSC in goal to show the better structure. The PL spectra has been also compared with experimental result for the same structure. Moreover, the QDSC has been optimized with respect to the thickness of QDs. The optimal conversion efficiency of 10 QD layers is improved from 14.85% to 18.30% by increasing the thickness of the QDs from 5 nm to 20 nm.

The electrical properties of InAsP/Si quantum dot solar cell (QDSC) are numerically studied and analyzed in this paper. Many effects like number of quantum dot (QD) layers inserted and Arsenic content of InAs x P 1-x on photovoltaic properties such as current density-voltage J-V and the external quantum efficiency (EQE) are investigated. Our results have been shown that the optimal Arsenic content is 0.6. With 30 InAsP/Si QDs layers, relative enhancements of about 7% and 6.70% of short-circuit current and efficiency are achieved, respectively. Otherwise, the absorption range edge of low energy photons was extended from 1120 to 1200 nm. This reveals that introduction of QDs in the intrinsic region of p -i- n Silicon (Si) solar cell enhances significantly the device characteristics beyond what has been reported for conventional semiconductor-based solar cells.

In recent years, the development of quantum well solar cells QWSCs (Quantum Well Solar Cells) has generated a great deal of interest. These configurations have shown good promise to optimize the low conversion efficiency of conventional solar cells because of the high rate of absorption losses present in them. In this work, we are interested in modeling and simulation of two different structures of solar cells, a simple solar cell based on silicon Si and a quantum well solar cell SiGe/Si. When a solar cell is compared to 80 quantum well layers of Si 0.8 Ge 0.2 with a pin solar cell based on Si. The short circuit current J sc increases from 23.55 to 37.48 mA/cm 2 with a relative increase of 59.15% found. In addition, the limit of the absorption band of the lower energy photons extends from 1100 nm to 2000 nm.

In this work, the performance of solar cell based on CdS-n/Cu 2 ZnSnS 4 -p hetero-junction is numerically simulated. The aim of the study is to investigate the influence of thickness, defects density and bandgap energy of absorber layer CZTS and the thickness of the buffer layer CdS of the solar cell on electrical parameters J sc , V oc , FF and efficiency η of the cell. The results of our simulation allowed us to optimize the parameters above mentioned in order to get the best efficiency at the optimal band gap which corresponds to the maximum of the solar spectrum with optimal values of the electrical performances of the cell. This results lead to develop CZTS solar cells with high efficiency and low cost and give a help full indication for fabrication process.

In this aim, we were interested in the optimization and simulation of pin-In1−xGaxN structure and InGaN multi quantum well structures for photovoltaic applications. This ternary alloy which is an III–V semiconductor presents important characteristics especially its gap energy, thus, the increase of the photons absorption of wavelengths. It has been shown that the increase in indium concentration increases the current density Jsc and the maximum output power. In return, the Voc decreases consequently. For In0.50Ga0.50N structure we observed that the current density and the maximum power are respectively around 19.50 mA/cm2 and 27.50 mW/cm2 with a ratio of 21.65 mA/cm2. Also it is shown that the incorporation of the quantum well in the active region results in an increase of Jsc and Pmax but Voc remains unchanged. The incorporation of 50 quantum well structure in the In0.50Ga0.50N gives 22 mA/cm2 of the current density and 32 mW/cm2 of the maximum output power. The use of the structure based on In0.50Ga0.50N (MQW) induces an efficiency of 32%. We deduced that the relative efficiency is improved by 10.9%.

This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x = 30% and T = 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain.

In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T1 = 480 °C and T2 = 520 °C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells.