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Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm. [ABSTRACT FROM AUTHOR]

Cu(In,Ga)Se2 solar cells were fabricated using a hybrid cosputtering/evaporation process, and efficiencies as high as 12.4% were achieved. The films were characterized by energy-dispersive X-ray spectroscopy, glancing incidence X-ray diffraction, scanning electron microscopy, auger electron spectroscopy, and transmittance and reflectance spectroscopy, and their properties were compared to the ones of films deposited by coevaporation. Even though the films were relatively similar, the ones deposited by the hybrid process tend to have smaller grains with a slightly preferred orientation along the (112) axis and a rougher surface. Both types of films have uniform composition through the depth. Characterization of these films by variable angle of incidence spectroscopic ellipsometry allowed for the calculation of the position of the critical points, via calculation of the second derivative of the dielectric function and fit with critical points parabolic band oscillators. The solar cells were then characterized by current-voltage and quantum efficiency measurements. An analysis of the diode parameters indicates that the cells are mostly limited by a low fill factor, associated mostly with a high diode quality factor (A -- 1.8) and high series resistance (Rs ∼ 1.1Ω-cm²). [ABSTRACT FROM AUTHOR]