1. Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells
- Author
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Federica Cappelluti, M. Tang, Jiang Wu, Alberto Tibaldi, Dongyoung Kim, Arastoo Khalili, Huiyun Liu, and Ariel Pablo Cedola
- Subjects
Materials science ,Article Subject ,lcsh:TJ807-830 ,Continuum (design consultancy) ,lcsh:Renewable energy sources ,quantum dots ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,law.invention ,law ,0103 physical sciences ,Solar cell ,General Materials Science ,Quantum ,010302 applied physics ,Renewable Energy, Sustainability and the Environment ,business.industry ,Doping ,Charge (physics) ,General Chemistry ,Physics based ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,simulation ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Quantum dot ,solar cells ,Optoelectronics ,0210 nano-technology ,business ,Voltage - Abstract
This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.
- Published
- 2018
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