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Your search keyword '"Bietti, S."' showing total 4 results
Start Over Author "Bietti, S." Journal iop conference series: materials science and engineering
4 results on '"Bietti, S."'

3. Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

Author

M. Abbarchi, Stefano Sanguinetti, Massimo Gurioli, Claudio Somaschini, Alexey Fedorov, Nobuyuki Koguchi, Sergio Bietti, Somaschini, C, Bietti, S, Sanguinetti, S, Koguchi, N, Fedorov, A, Abbarchi, M, and Gurioli, M

Subjects
Physics, quantum nanostructures, molecular beam epitaxy, III-V semiconductors, Nanostructure, Photoluminescence, Fabrication, business.industry, Physics::Optics, Nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Characterization (materials science), Condensed Matter::Materials Science, Microscopy, Physics::Atomic and Molecular Clusters, Optoelectronics, Luminescence, business, Quantum, FIS/03 - FISICA DELLA MATERIA
Abstract

We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported.

Published
2009
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4. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

Author

Claudio Somaschini, Nobuyuki Koguchi, Stefano Sanguinetti, Alexey Fedorov, Sergio Bietti, Giovanni Isella, Daniel Chrastina, Bietti, S, Sanguinetti, S, Somaschini, C, Koguchi, N, Isella, G, Chrastina, D, and Fedorov, A

Subjects
quantum nanostructures, molecular beam epitaxy, III-V semiconductors, Fabrication, Photoluminescence, Materials science, Condensed matter physics, business.industry, Substrate (electronics), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Computer Science::Other, Condensed Matter::Materials Science, Lattice constant, Quantum dot, Quantum dot laser, Optoelectronics, business, Luminescence, FIS/03 - FISICA DELLA MATERIA
Abstract

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Published
2009
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