Search

Your search keyword '"Dussaigne, A"' showing total 5 results
Start Over Author "Dussaigne, A" Journal japanese journal of applied physics
5 results on '"Dussaigne, A"'

1. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Author

Corfdir, Pierre, primary, Dussaigne, Amélie, additional, Teisseyre, Henryk, additional, Suski, Tadeusz, additional, Grzegory, Izabella, additional, Lefebvre, Pierre, additional, Giraud, Etienne, additional, Shahmohammadi, Mehran, additional, Phillips, Richard T., additional, Ganiere, Jean-Daniel, additional, Grandjean, Nicolas, additional, and Deveaud, Benoît, additional

Published
2013
Full Text
View/download PDF

2. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Author

Mehran Shahmohammadi, Jean-Daniel Ganière, Pierre Corfdir, Nicolas Grandjean, Henryk Teisseyre, Tadeusz Suski, Richard T. Phillips, Izabella Grzegory, Pierre Lefebvre, Benoit Deveaud, E. Giraud, Amélie Dussaigne, Institut de Physique de la Matière Condensée (EPFL), Ecole Polytechnique Fédérale de Lausanne (EPFL), Department of Physics, Cavendish Laboratory, University of Cambridge [UK] (CAM), Institute of High Pressure Physics [Warsaw] (IHPP), Polska Akademia Nauk = Polish Academy of Sciences (PAN), Institute of Physics [Warsaw] (IFPAN), Polish Academy of Sciences (PAN), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Swiss National Science Foundation - Project No. 129715.Polish National Science Center (Project DEC-2011/03/B/ST3/02647)., European Project: 265073,EC:FP7:PEOPLE,FP7-PEOPLE-2010-ITN,NANOWIRING(2010), Phillips, Richard [0000-0002-8279-3475], and Apollo - University of Cambridge Repository

Subjects
radiative lifetime, Photoluminescence, quantum well, Exciton, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, GaN, Condensed Matter::Materials Science, 0103 physical sciences, Radiative transfer, Spontaneous emission, Biexciton, Quantum well, exciton, Condensed Matter::Quantum Gases, 010302 applied physics, Physics, Condensed matter physics, Condensed Matter::Other, General Engineering, PACS : 71.35.-y, 81.15.Hi, 81.07.St, 81.05.Ea, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Quantum efficiency, Charge carrier, 0210 nano-technology
Abstract

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.

Published
2013

5. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on $a$-Plane GaN Substrates

Author

Corfdir, Pierre, Dussaigne, Amélie, Teisseyre, Henryk, Suski, Tadeusz, Grzegory, Izabella, Lefebvre, Pierre, Giraud, Etienne, Shahmohammadi, Mehran, Phillips, Richard T., Ganiere, Jean-Daniel, Grandjean, Nicolas, and Deveaud, Benoît

Abstract

This article presents the dynamics of excitons in $a$-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.

Published
2013
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results