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We report the process for the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to SiH2Cl2and O3. The growth kinetics of silicon oxide films was examined by varying reactant exposures at various deposition temperatures ranging from 250 to 450 \mbox{\circC}. The deposition was governed by a self-limiting surface reaction, and the growth rate at 350 \mbox{\circC} was saturated at 0.25 nm/cycle for SiH2Cl2exposures of over $5\times 10^{9}$ L ($10^{-6}$ Torr$\cdot$s). The chlorine content and the wet-etching rate in a diluted HF solution were reduced by increasing the deposition temperature. The films deposited at temperatures ranging from 350 to 450 \mbox{\circC} exhibited excellent physical and electrical properties that were equivalent to those of silicon oxide films deposited at 760 \mbox{\circC} by low-pressure chemical vapor deposition.

The copper films with a thickness of 600 nm were prepared on TiN at 180° C under 0.5 Torr using chemical vapor deposition (CVD) method. The deposited films were subjected to be annealed at various temperatures (350-550° C) in Ar and H2(10%)/Ar ambients. The changes of the microstructures and the electrical resistivity after annealing were investigated. H2(10%)/Ar was more effective than Ar as an ambient gas for the post annealing of the copper films, because smaller resistivity and larger grain size of the annealed film was given. The resistivity of the annealed film decreased, and the grain size increased with the annealing temperature. However, 550° C is found to be inappropriate as the annealing temperature, because the out-diffusion of silicon through the TiN layer was observed. Upon annealing at 450° C for 30 min in an H2(10%)/Ar ambient, the grain size of the film increased from 148 nm to 219 nm, and the resistivity decreased from 2.35 µ ?·cm to 2.12 µ ?·cm.