1. Influence of a SiO2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor
- Author
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Shuhei Hamada, Miki Miyanaga, Mamoru Furuta, Daichi Koretomo, and Yuta Hashimoto
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Passivation ,business.industry ,Transistor ,General Engineering ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,Conductor ,Hysteresis ,Reliability (semiconductor) ,law ,Thin-film transistor ,0103 physical sciences ,Optoelectronics ,Positive bias ,0210 nano-technology ,business ,Layer (electronics) - Abstract
The influence of a SiO2 passivation layer on the electrical properties and reliability of an In–W–Zn–O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures (Ta). Although the TFT without passivation showed good transfer characteristics when the Ta is 150 °C, it has huge hysteresis and poor reliability. Furthermore, the TFTs without passivation changed from transistor to conductor when the Ta is 200 °C or higher. In contrast, the TFTs with passivation exhibited switching property even at Ta of 350 °C. Positive bias temperature stress reliability of the TFTs significantly improved by applying the Ta with passivation. Thus, a passivation layer is essential to increase the Ta, resulting in the improvement of electrical properties and reliability of the IWZO TFTs.
- Published
- 2018
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