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Recently, we directly observed the out-of-plane Dresselhaus spin–orbit (SO) interaction field and extracted the SO coefficient β from InGaAs (110) quantum wells (QWs). However, the extracted β was much larger than that of the (001) QWs, which yielded an in-plane Dresselhaus SO field. In this study, we perform Monte-Carlo simulations and reproduce the results of time-resolved and spatiotemporally resolved Kerr rotation measurements in InGaAs (110) QWs. The results conclusively show that InGaAs (110) QWs have a strong out-of-plane Dresselhaus SO field as compared with (001) QWs.

In equilibrium reaction processes, the precise control of composition ratios in multi-component thin films is problematic due to the changes in the state of precursor materials, which are caused by differences in metal ion stabilities. We have identified a strategy to resolve this problem by first developing a theory and then constructing a fine-channel type mist chemical vapor deposition (mist-CVD) system with two solution chambers and a mist-mixing chamber. Zn1-x Mg x O thin films were fabricated using the conventional and the developed mist-CVD systems to verify the theory. The properties of the Zn1-x Mg x O thin films produced using the two systems were significantly different. The Mg composition ratio in the film was clearly influenced by the Mg ion stability and all the measurement results support the theory.

Transparent conducing antimony doped tin oxide (SnO x :Sb) thin films were fabricated by solution-processed atmospheric-pressure 3rd generation mist chemical vapor deposition (3rd G mist CVD) system with two solution chambers and one mixing chamber to control the atmosphere in reaction area. To study how to reduce the resistivity, the effects of each additive component in dopant solution were investigated; this was followed by identification of components contributing to the fabrication of SnO x :Sb films. Experimentally, the HNO3 clearly affected the resistivity and the formation of SnO2 thin films through a change in the valence state of N derived from HNO3 promoting the transformation of Sn (II) and Sb (III) to Sn (IV) and Sb (V). Moreover, the values of electron and hole effective mass were defined using the specified referred parameters to confirm the band diagram of SnO x :Sb thin films fabricated by 3rd G mist CVD system.

A MoS2 layered thin film was grown by atmospheric-pressure solution-based mist CVD on a 30 mm2 large-area substrate at 400 °C, which is a significantly lower growth temperature than that of conventional CVD. The film formation was reliably confirmed by Raman spectroscopy, grazing incidence X-ray diffraction (GIXD), and transmission electron microscope (TEM). Possibly, film formation energy was decreased by dissolving (NH3)6Mo7O24 4H2O in methanol owing to formation of an intermediate product, whose decomposition temperature was lower than 760 °C — the decomposition temperature observed in thermogravimetric-differential thermal analysis (TG-DTA). Optical constants were derived by spectroscopic ellipsometry measurements, whose results indicate the reasonably good quality of MoS2 and the suitability of mist CVD in response to the large-area low-temperature growth request from industry.

Yttrium iron garnet (YIG) thin films were deposited on c-plane sapphire substrates under atmospheric pressure by a mist CVD technique, and their chemical composition and optical properties were examined. The thin films deposited at 450 °C showed an [Y]/[Fe] ratio of 0.57, indicating the deposition of yttrium iron oxide, while the molar ratio of [Y]/[Fe] in the precursor solution was set at 1.5. A thermodynamic model was developed to explain the reaction paths of the YIG thin film fabrication process using thermogravimetric differential thermal analysis (TG-DTA) results. The model indicates that the decomposition rate of yttrium acetylacetonate [Y(acac)3 nH2O] was much lower than that of iron acetylacetonate [Fe(acac)3], providing a plausible explanation for the large difference between the composition ratio of the thin films and that of the precursor solutions.