Search

Your search keyword '"Yamada, Hisashi"' showing total 22 results
Start Over Author "Yamada, Hisashi" Journal japanese journal of applied physics
22 results on '"Yamada, Hisashi"'

12. Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

Author

Jevasuwan, Wipakorn, primary, Urabe, Yuji, additional, Maeda, Tatsuro, additional, Miyata, Noriyuki, additional, Yasuda, Tetsuji, additional, Ohtake, Akihiro, additional, Yamada, Hisashi, additional, Hata, Masahiko, additional, Lee, Sunghoon, additional, Hoshii, Takuya, additional, Takenaka, Mitsuru, additional, and Takagi, Shinichi, additional

Published
2012
Full Text
View/download PDF

17. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes

Author

Farrell, Robert M., primary, Feezell, Daniel F., additional, Schmidt, Mathew C., additional, Haeger, Daniel A., additional, Kelchner, Kathryn M., additional, Iso, Kenji, additional, Yamada, Hisashi, additional, Saito, Makoto, additional, Fujito, Kenji, additional, Cohen, Daniel A., additional, Speck, James S., additional, DenBaars, Steven P., additional, and Nakamura, Shuji, additional

Published
2007
Full Text
View/download PDF

20. Impact of substrate off-angle on the m-plane GaN Schottky diodes

Author

Yamada, Hisashi, Chonan, Hiroshi, Takahashi, Tokio, and Shimizu, Mitsuaki

Abstract

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1deg toward $[000\bar{1}]$. The surface of the GaN epitaxial layers on the 0.1deg-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm[?]3) and carbon (>1016 cm[?]3) impurities. The residual carbon and oxygen impurities decreased to <1016 cm[?]3 when the off-angle of the m-plane GaN substrate was increased. The leakage current of the 0.1deg-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1deg. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Published
2018

21. High thermal stability of abrupt SiO2/GaN interface with low interface state density

Author

Xuan, Nguyen, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, and Miyazaki, Seiichi

Abstract

The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 degC has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 degC. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 degC. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

Published
2018

22. Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

Author

Xuan, Nguyen, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, and Miyazaki, Seiichi

Abstract

The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance-voltage (C-V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C-V curves even after post deposition annealing at 800 degC. Besides, we found that the current density-oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case.

Published
2018

Catalog

Books, media, physical & digital resources
See catalog results