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Thin film solar cells based on chalcopyrite Cu(In, Ga)Se 2 (CIGSe) absorber layers were fabricated successfully using a three-stage co-evaporation process. The effects of annealing the (In,Ga) 2 Se 3 (IGSe) precursor layer on the preferred orientation and morphology of the CIGSe films as well as the performance of the Ag/Ni/(Ga,Al):ZnO/i-ZnO/CdS/CIGSe/Mo/Glass cell were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and illuminated J–V and quantum efficiency measurements. Layer studies indicated that the CIGSe film texture changed from (112) to (220) with increasing annealing time. Cell studies showed that the performance of the solar cell was improved with an abrupt change in the open circuit voltage and a remarkable increase in efficiency from 7.35% to 14.35% according to the annealing time in the range, 0–30 min. [ABSTRACT FROM AUTHOR]

Antimony sulfide (Sb 2 S 3) is widely used in photocatalysts and photovoltaic cells because of its abundant reserves, low toxicity, environmental friendliness, narrow band gap, and high light absorption capacity. Sb 2 S 3 shows a quasi-one-dimensional structure composed of [Sb 4 S 6 ] n nanoribbons, a lot of reported studies are focused on preparing Sb 2 S 3 with [hk1] oriented dominant growth to improve the photogenerated carrier transport capacity of Sb 2 S 3. However, there is relatively few research on the preparation of [hk1] oriented rod-like Sb 2 S 3 by vapor transport deposition (VTD) method. In this work, the VTD method was used to prepare Sb 2 S 3 with [hk1] oriented growth on the FTO substrate, and then composite with the ternary solid solution Cd x Zn 1−x S. Finally, a novel Sb 2 S 3 /Cd 0.6 Zn 0.4 S S-scheme heterojunction with rod-like core-shell structure was successfully constructed, which could effectively improve the photoelectrochemical properties. Because the solid solution component x is adjustable, that is, Cd x Zn 1−x S has continuously adjustable band gap width and energy level position, the Sb 2 S 3 /Cd x Zn 1−x S heterojunction type can be regulated from Type-II to S-scheme. Photoelectrochemical (PEC) tests indicated that the composite photoanode Sb 2 S 3 /Cd 0.6 Zn 0.4 S achieved a higher photocurrent density (2.54 mA·cm−2, 1.23 V vs. RHE), which is about 4.31 times that of pure Sb 2 S 3 nanorod photoanode (0.59 mA·cm−2, 1.23 V vs. RHE). • Rod-like Sb 2 S 3 with [hk1] orientation is deposited on FTO substrate by VTD method. • The Sb 2 S 3 /Cd x Zn 1−x S heterojunction type can be regulated from Type-Ⅱ to S-scheme. • The S-scheme heterojunction could effectively promote PEC water splitting. • The photoelectrode exhibits considerable photocurrent 2.54 mA·cm−2 at 1.23 V RHE. [ABSTRACT FROM AUTHOR]

Achieving high light absorption efficiency and low photogenerated carrier recombination rates is critical in the production of H 2 by photoelectrochemical water splitting. Antimony selenide (Sb 2 Se 3) has recently received much attention due to its favorable optoelectronic properties, low cost and unique nanorod structure. Herein, we constructed coral-like Sb 2 Se 3 /SnS 2 heterojunction by introducing SnS 2 with a nanosheet structure, which contributes to enhanced light absorption and provides more reaction sites. On this basis, synergistic optimization is carried out by the bilayer Sb 2 Se 3 structure and ferrihydrite (Fh) to effectively inhibit charge recombination at the interface and facilitate electron transport. Compared to monolayer Sb 2 Se 3 (1.54%), the IPCE value of bilayer Sb 2 Se 3 /SnS 2 /Fh can reach 20.56% (735 nm). The prepared bilayer Sb 2 Se 3 /SnS 2 /Fh has a maximum photocurrent density of approximately − 1.0 mA cm−2 at 0 V RHE , continuous testing for 1 h compared to monolayer Sb 2 Se 3 still maintains more than 4 times improvement. This work provides a basis for the development of high efficiency and low cost Sb 2 Se 3 -based optoelectronic devices. [Display omitted] • The bilayer Sb 2 Se 3 structure was constructed by sequential deposition. • A combination between 1D Sb 2 Se 3 nanorods and 2D SnS 2 nanosheets has been achieved. • Surface modification using ferrihydrite as an interface engineering material. • Optimized photoelectrode current density is 50 times higher than original sample. • The PEC mechanism of bilayer Sb 2 Se 3 /SnS 2 /Fh photoelectrode was proposed. [ABSTRACT FROM AUTHOR]

In this study, Eu 3+ and Tb 3+ co-doped Y 2 O 3 particles were prepared via the simple, cost-effective urea homogeneous precipitation method without additives. The chosen particles were added in the SiO 2 sols to get anti-reflection (AR) and wavelength conversion bi-functional films. Careful investigations were carried out to find the optimum preparation conditions and proper morphology. SEM images showed that the particle sizes reduced as metal ion/urea ratio decreased. Additionally, the extracted particles turned from sphere to lamellar type when the deionized water, which was used as solvent, reduced to a certain extent. The mechanisms of the morphology formation and diversification were proposed as well. The as prepared materials can convert UV region photos to visible photons between 460 nm and 640 nm, which just matched the spectral response of most solar cells. The spherical sample showed better luminescence performance than the one with lamellar morphology. In addition, the optical transmittance spectra indicated that the films adding spherical particles had better anti-reflective performance, and the best adding amount was 0.08 g. Finally, As a proof-of-concept application, the as prepared bi-functional films were used to test the standard monocrystalline silicon solar cell assembled with anti-reflection and wavelength conversion bi-functional films photoelectric conversion properties. As a result, the as prepared bi-functional films could effectively improve the photoelectric conversion efficiency by 0.23% compared to pure SiO 2 AR coating film and 0.55% compared to glass. [ABSTRACT FROM AUTHOR]