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To realize high-performance perovskite solar cells (PSCs) ensuring low-cost flexible application with low energy consumption, efficient electron transport layers (ETL) that can be processed at low temperatures are desired. In this contribution, low temperature (about 70 °C) UV/ozone irradiation was applied to synthesis crystallized TiO 2 films as ETL. The UV exposure induces photo-catalytic removal of the organic ligands and spontaneous coalescence of the TiO 2 framework, resulting in excellent TiO 2 films with considerable crystallinity. UV irradiation induces both complete removal of organic media and more efficient charge collection. Accordingly, planar heterojunction (PH) PSCs with such ETL exhibited outstanding photovoltaic performance up to 17.03%, which is even higher than the value (12.98%) of counterpart device with high temperature thermal sintered TiO 2 ETL (without TiCl 4 treatment). These low temperature solution-processed TiO 2 films by facile UV irradiation are suitable for the low-cost, large yield solution process on a flexible substrate for photoelectric devices. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) have attracted great attentions due to their excellent photovoltaic performance. Further improvement of device efficiency is limited by the recombination of the charge carriers even a heterojunction-based architecture is employed. Herein, we discovered that a simple surface modification of the perovskite film by incorporating isopropyl alcohol (IPA) post-treatment could convert the top surface to be more n-type, which spontaneously formed an n/n+ homojunction between the bulk (weak n type (n)) and the surface (more n-type (n+)) in a single perovskite film. A reconstruction toward a PbI 2 -rich top surface was induced by the remove of excess formamidinium iodide dissolved in a polar solvent IPA. This reconstructed n/n+ homojunction lead to the enlarged built-in electric field for efficient charge separation and transport of the photogenerated carriers. The inverted PSCs with the reconstructed n/n+ homojunction contribute to improve efficiency and narrow their efficiency gap with conventional n-i-p type devices. Our result suggests that the homojunction structure is an effective approach to reduce carrier recombination loss and achieve highly efficient PSCs. [Display omitted] • A facile surface homojunction reconstruction is achieved by solvent treatment. • A PbI 2 -rich perovskite surface is induced by the remove of excess FAI. • The reconstructed n/n+ homojunction brings about the enlarged built-in electric field. • The reconstructed n/n+ homojunction contributes to improved photovoltaic efficiency. [ABSTRACT FROM AUTHOR]

• The fluorine atom has induced electrostatic potential and dipole moment change. • Cl- doping can enhance crystallization and prevent phase change. • The champion device achieves a PCE of 16.29% and the humidity stability is improved. [Display omitted] All-inorganic CsPbI 2 Br material has attracted considerable attention due to its good balance between phase stability and absorption capacity. However, the power conversion efficiency (PCE) and device stability of CsPbI 2 Br-based perovskite solar cells (PSCs) still lag far behind those of their counterparts, mainly deriving from the notoriously poor moisture stability under humid environment and large serious charge recombination. Herein, a typical phenethylammonium chlorine (PEACl) and its fluorinated derivative 4-fluoro-phenethylammonium chlorine (F-PEACl) are individually incorporated to modify the surface of CsPbI 2 Br film to ameliorate the above issues. Benefiting from the comprehensive passivation effect of ammonium halogen, the trap states of treated CsPbI 2 Br are vastly suppressed. In particular, fluorination significantly increased the dipole moment and hydrophobic property of F-PEACl. Thus, the present CsPbI 2 Br PSC achieves a champion PCE of 16.29% with high open-circuit voltage of 1.272 V, while the reference device and PEACl-treated device yield PCEs of 14.30% and 15.64%, respectively. More importantly, the PSC with F-PEACl capping layer retains 87.2% of its initial PCE after 1000 h storage under 20% RH ambient without encapsulation. Our results reveal the underlying mechanism of performance improvement by surface passivation strategy and provide an effective approach to further boost the CsPbI 2 Br PSC efficiency and stability. [ABSTRACT FROM AUTHOR]

Ultrathin and compact SnO x amorphous layers derived from SnCl 4 were introduced at the interface of electron transport layer (ETL)/perovskite or FTO/ETL to enhance the electron coupling between layers, passivate the trapping defects and optimize the energy level alignment. As results of the increased interface electron collection and reduced interface recombination, the planer perovskite solar cell (PSC) with SnO 2 nanocrystal (NC) ETL pre-treated by SnCl 4 (Cl-SnO 2) shows the power conversion efficiency (PCE) enhancement from 16.3% to 18.6%, and the device hysteresis has also been significantly restrained. In comparison, the planer PSCs with traditional SnCl 4 (SnO 2 -Cl) post-treated SnO 2 NC ETL makes the PCE increased from 16.3% to 17.3%. These results indicate that both two kinds of treated ways could improve the performance of the PSCs but compared with the post-treatment process, the devices based on Cl-SnO 2 pre-treated ETL present superior performance, which is attributed to the closer contact and enhanced electron coupling between FTO and SnO 2 NC ETL with Cl-SnO 2 in between. An ultrathin compact SnO 2 layer derived from SnCl 4 was introduced at the interface of FTO/SnO 2 to enhance the electron coupling and passivate the trapping defects between layers. And the performance is significantly improved compared with devices with untreated or traditional post-treated SnO 2 nanocrystal electron transport layers. Image 1 • Ultrathin and compact SnO x layer is introduced at the interface of FTO/Electron transport layer (ETL). • The devices with SnO 2 ETL pre-treated by SnCl 4 shows the power conversion efficiency enhancement from 16.3% to 18.6%, and the device hysteresis has also been significantly restrained. • This paper also fabricated devices with SnCl 4 post-treated SnO 2 ETL for comparing to further show the advantages of the new treatment way. [ABSTRACT FROM AUTHOR]