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A multifunctional resistive switching memory devices with the typical sandwich structure of Al/Poly(4-vinylphenol) (PVP)+2-Amino-5-methyl-1,3,4-thiadiazole/Al is fabricated. Al as the bottom and top electrodes is easy to realize by simple thermal evaporation process, and a PVP and 2-Amino-5-methyl-1,3,4-thiadiazole composite film as the active layer is prepared by sol-gel method and spin coating process. The as-fabricated resistive switching memory device shows write-once-read-many (WORM) and rewritable multifunctional memory behaviors, for the rewritable and WORM memory modes, the ON/OFF ratio is 104 and 80, respectively. The as-fabricated device shows tristable conductivity states which equivalent to "0", "1" and "2", and these three conductance states are steady under the constant voltage retention test, as well as during the endurance test, indicating advantageous features of stable operation and dependable endurance. It is noteworthy that the simple preparation process is expected to promisingly hold the post of industrialization low-cost preparation in future electronic devices for ternary data storage utilities. • A multifunctional resistive switching memory devices was fabricated. • The as-fabricated device shows tristable conductivity states. • It is expected to promisingly hold the post of ternary data storage utilities. [ABSTRACT FROM AUTHOR]

Two-dimensional NiAl layered double hydroxides (LDHs) were synthesized by urea hydrolysis method. Considering its unique layered structure and high-speed carrier transfer channel, NiAl-LDHs were applied to the active layer of memristor through spin coating process. It is found that the Al/NiAl-LDHs/Al memristor exhibits unipolar resistance switching characteristics, which resistive switching mechanism is attributed to formation and fusing of conductive filaments controlled by oxygen vacancies. Based on this Al/NiAl-LDHs/Al memristor, a D -type latch was constructed. A memtransistor with Si/SiO 2 /graphene oxide (GO)/Al/NiAl-LDHs/Al structure was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. The memtransistor exhibits excellent gate controllability and resistive switching characteristics. Combined with its characteristics, we used the memtransistor to build a D -trigger and verify its memory logical function. The result shows the great potential of layered bimetallic hydroxide materials in the field of resistance switching memory and memory computing. • The unipolar resistive switching characteristics of NiAl-LDHs memristor were investigated. • A D -type latch was constructed using NiAl-LDHs memristor, which logical function was verified. • A memtransistor was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. • A D -trigger was constructed by the memtransistor, which exhibits excellent memory logical function. [ABSTRACT FROM AUTHOR]

• Threshold switching characteristics has been reported in 2D composite nanomaterials. • The effectiveness of cross crosstalk suppression was indicated by assembled 1S1R unit. • The developmental potentiality to restrain the crosstalk issue was indicated. 2D composite nanomaterials of insulating boron nitride (BN) and semiconductor molybdenum disulfide (MoS 2)-based flexible threshold switching selectors (Ag/BN+MoS 2 /Ag based on BM1 and BM2) are fabricated. Both selectors shown excellent bidirectional threshold switching characteristics. The assembled 1S1R unit comprising Ag/BN+MoS 2 /Ag based on BM1 selector and bipolar rewritable Ag/ZnO/Ag resistive switching memory shows the effectiveness of cross crosstalk suppression. The thermal conductivity of the functional layer based on BM2 decreasing to some extent with the content of BN decreasing, resulting in an increasing trend of V hold compared with selector based on BM1. And the selectors of Ag/BN+MoS 2 /Ag based on BM2 were assembled with a unidirectional open WORM Ag/polyvinyl carbazole/Ag memory, it also shows a good effect in restraining the crosstalk. It has large developmental potentiality in flexible 2D composite nanomaterials threshold switching selector to restrain the crosstalk issue for a large RRAM array. [ABSTRACT FROM AUTHOR]

The resistive switching memories are in prosperity development on account of its simple structure and high performance. A primary problem of resistive switching memory reliability is discrete and random distribution of resistive switching parameters, which limits greatly the possible range of its digital memory application on account of uniformity of resistance parameters is poor and the distribution range is too large. But, from the other side, these random parameter distributions are eable be used to complete some computing tasks. Here, a random number generation is demonstrated with stochastic variation of V set in a flexible threshold switching device by using the carbon nanotube and polyvinyl alcohol composite materials. Two reading voltages was applied to the two threshold switching devices, the electric potential of V cin randomized either positive or negative in accordance with the cycle to cycle evolution of two threshold switching devices by the control of the voltage divider, which in return comes about a random bitstream after passing by the comparer. As well as, its transient characteristics have been illustrated for data security appilcation. Image 1 • For data safety, polyvinyl alcohol and Mg were used to fabricated transient device. • The volatile ovonic threshold switching behavior has been reported. • A random number generation is built with stochastic variation of V set in a threshold switching device. • The transient characteristics have been illustrated for data security appilcation. [ABSTRACT FROM AUTHOR]