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Heterostructures composed of different semiconducting materials have aroused wide attentions due to their fascinating properties originated from the interfaces. Particularly, the recent two dimensional layered materials (2DLM) have provided novel platforms to flexibly design the heterostructures for diverse electronic and optoelectronic applications. In this work, we have reported the growth of CdSe nanoplates/MoS 2 monolayer vertical heterostructures with efficient and fast visible-wavelength photodetections. Highly dense CdSe nanoplates were vertically assembled on monolayer MoS 2 through a two-step chemical vapor deposition (CVD) process. The interfacial photoinduced charge behaviors were investigated in detail via the time resolution photoluminescence (TRPL) measurements, revealing the efficient charge transfer across the heterointerface. Benefiting from the large CdSe coverage and efficient charge transfer, superior photodetection performances of the CdSe/MoS 2 heterostructures can be obtained with an enhanced photoresponsivity of 1.63 A/W, which can be further improved to be 12 A/W via applying the gate voltage. Besides, the heterostructure detectors also exhibit a very fast photoresponse speed of 370 μs, much faster than previous photodetectors based on CVD-grown 2D heterostructures. The as-synthesized CdSe/MoS 2 heterostructures may find important applications in integrated optoelectronic systems. • Highly dense CdSe nanoplates were vertically assembled on monolayer MoS 2. • The interfacial photoinduced charge behaviors were investigated in detail via the TRPL. • The CdSe/MoS 2 heterostructures detectors demonstrate high photoresponsivity of 12 A/W. • The detectors show the very fast photoresponse speed of 370 μs. [ABSTRACT FROM AUTHOR]