1. Enhancing thermoelectric performance of SnTe via stepwisely optimizing electrical and thermal transport properties.
- Author
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Wang, Dongyang, Zhang, Xiao, Yu, Yong, Xie, Lin, Wang, Jinfeng, Wang, Guangtao, He, Jiaqing, Zhou, Yuling, Pang, Qiantao, Shao, Jianwei, and Zhao, Li-Dong
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THERMOELECTRICITY , *SEEBECK coefficient , *THERMAL properties of condensed matter , *THERMAL conductivity , *THERMAL properties - Abstract
Abstract In this work, we report that the high performance of SnTe could be realized by enhancing electrical transport properties (power factor) and reducing thermal conductivity through stepwisely introducing elements of Sb, In and Se. We found that Sb and In co-doping can enhance Seebeck coefficients in the broad temperature range via optimizing carrier density and introducing resonant state, respectively. Moreover, nanostructures could be formed when the Sb content beyond the solubility limit in SnTe matrix, which coupled with point defects from In and Se alloying result in a very low (lattice) thermal conductivity through the enhanced phonon scattering from defects and grain boundaries. A peak ZT ∼1.0 at 923 K can be achieved with the enhanced power factor and reduced thermal conductivity. Accordingly, the average ZT value increases from ∼0.20 for undoped SnTe to ∼ 0.60 for multiple-doped SnTe (Sn 0.823 Sb 0.17 In 0.007 Te 0.98 Se 0.02) over 300–923 K, generating a high calculated conversion efficiency ∼ 11%. Present results indicate the high performance of SnTe can be obtained through stepwisely optimizing strategy in both electrical and thermal transport properties. Highlights • A stepwisely enhancing in thermoelectric transport properties were achieved in p -type SnTe. • Power factor of p -type SnTe was enhanced from ∼3.4 μW cm−1 K−2 to ∼ 11.7 μW cm−1 K−2 at 300 K through Sb and In co-doping. • κ lat of p -type SnTe was reduced from ∼3.4 Wm−1K−1 to ∼ 1.4 Wm−1K−1 at 300 K through Sb, In co-doping, and Se alloying. • ZT ave of p -type SnTe is distinctly enhanced from ∼0.2 to ∼0.6 over 300–923 K. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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