1. Sputter deposition of Ag-induced WO3 nanoisland films with enhanced electrochromic properties.
- Author
-
Xu, Qingfan, Yin, Yi, Gao, Tian, Cao, Gangqiang, Chen, Qi, Lan, Changyong, Li, Fangjia, and Li, Chun
- Subjects
- *
SPUTTER deposition , *MAGNETRON sputtering , *REACTIVE sputtering , *DIFFUSION coefficients , *ELECTROCHEMICAL analysis - Abstract
Nanostructured WO 3 films prepared by an industry compatible method with large surface area and strong adhesive force to the substrate are highly desired for electrochromic (EC) applications. Here, we report the preparation of a kind of WO 3 nanoisland films on indium-doped tin oxide (ITO)-coated glass substrates by Ag-induced reactive sputtering deposition combined with a post-etching treatment. Our study demonstrates that compared with the bare WO 3 film, the nanoisland film exhibits apparently enhanced EC performance, including high luminous transmittance (92.8%) in a bleached state, high luminous coloration efficiency (126.4 cm2/C), relatively fast color-switching time (7.1 s for coloring and 12.1 s for bleaching), decent long-term cycling stability (2000 cycles) and improved self-bleaching ability. Electrochemical kinetics analysis indicates that such enhanced EC performance relies on large lithium-ion diffusion coefficient (2.37 × 10−10 cm2/s), a good ability of charge storage (10.82 mF/cm2), and low charge-transfer resistance (196 Ω) of the nanoisland microstructure. The results shed light on exploring a novel method to prepare high EC performance WO 3 film. Image 1 • WO 3 nanoisland films can be fabricated by Ag-induced magnetron sputter deposition combined with a post-etching treatment, which significantly increases the contact interface between the electrolyte and materials. • The special nanostructure promotes the electrochromic performance eminently: higher optical transmittance (92.8%), coloration efficiency (126.4 cm2/C) and fast response time (7.1 s for coloring and 12.1 s for bleaching). • The electrochemical performance was analyzed to explain the internal cause relying on large ion diffusion coefficient (2.37 × 10−10 cm2/s), good charge storage (10.82 mF/cm2), and low charge-transfer resistance (196 Ω). [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF