1. Fabrication and characterization of copper–indium–diselenide (CuInSe2, CIS) thin film using one-step electro-deposition process.
- Author
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Li, Libo, Ma, Yue, Gao, Guanxiong, Wang, Wentao, Guo, Shaowen, You, Jun, and Xie, Jingchen
- Subjects
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COPPER films , *ELECTROFORMING , *MICROFABRICATION , *CHEMICAL processes , *CHEMICAL precursors , *TERNARY alloys - Abstract
We had successfully fabricated CuInSe 2 (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe 2 films. The structure, composition, chemical state and optical characterization of CuInSe 2 films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe 2 thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe 2 was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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