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The structural, optical and morphological properties of the tantalum pentoxide (Ta 2 O 5) and SiO 2 /Ta 2 O 5 films to be used as an anti-reflective coating (ARC) were investigated. Besides, it was examined and discussed in detail how the performance of MBE grown GaInP/GaAs/Ge triple-junction solar cell (TJSC) structure was affected by the single and double-layer ARCs. The SIMS results showed that uniform atomic distribution has formed throughout the depth of the deposited films. The XPS analysis results demonstrated that the chemical structures of the films were Ta 2 O 5 and SiO 2. The FTIR absorbance spectra confirmed that the compositions of the films were Ta 2 O 5 and SiO 2 /Ta 2 O 5. It was determined that the average optical reflectivity values were decreased to 14% and 7% with the use of Ta 2 O 5 and SiO 2 /Ta 2 O 5 , respectively. The SLARC and DLARC have increased the conversion efficiency of the fabricated TJSCs by around 6% and 19%. The ARCs caused an increase in the EQE and J sc values of each sub-cell. The obtained results clearly demonstrated that the enhanced anti-reflective performance corresponding to decreasing optical reflection losses with the SiO 2 /Ta 2 O 5 DLARC had improved the electrical performance better compared to the Ta 2 O 5 SLARC. • The GaInP/GaAs/Ge TJSC structure was grown and solar cell fabrication was realized. • The Ta 2 O 5 SLAR and SiO 2 /Ta 2 O 5 DLAR films were coated onto the fabricated TJSCs. • A more AR performance was exhibited as DLARC reduced the average reflectivity. • The SLARC and DLARC were increased the efficiency of the TJSC by 6% and 19%. • The results showed that SiO 2 /Ta 2 O 5 DLARCs can be offered for enhancing TJSC performance. [ABSTRACT FROM AUTHOR]

A two-step process was used to prepare Cu 2 SnS 3 films in this study: first, precursor stacks were deposited using a magnetron sputtering technique, and then the stacks were annealed in sulfur-containing atmosphere at various times. Utilizing a variety of characterization techniques, it was thoroughly examined how sulfurization time affected the films' structural, morphological, optical, and electrical characteristics. X-ray diffraction and Raman spectroscopy measurements indicated that two structural polymorphs (tetragonal and monoclinic) of Cu 2 SnS 3 co-existed in the films. Surface and cross-sectional images obtained by scanning electron microscopy showed that the microstructures of the films were entirely changed to well-grown crystal structures at 30 min and 40 min sulfurization times. In 2 S 3 /Cu 2 SnS 3 stacks were prepared by the deposition of In 2 S 3 films on the absorber layers sulfurized for 30 and 40 min by RF magnetron sputtering method. The fabrication of Ni/Al/Ni/AZO/i:ZnO/In 2 S 3 /Cu 2 SnS 3 /Mo/SLG-structured devices was done using both thermally annealed and non-annealed In 2 S 3 /Cu 2 SnS 3 stacks. Secondary ion mass spectroscopy studies of the devices revealed that the indium diffused from In 2 S 3 layer into the Cu 2 SnS 3 absorber to a certain depth. The efficiency values of the devices were found to have been slightly enhanced with the annealing of the In 2 S 3 /Cu 2 SnS 3 stacks. The solar cell with the maximum efficiency (η) of 3.12 %, open-circuit voltage (V OC) of 0.265 mV, short-circuit current (J SC) of 37.90 mA/cm2, and fill factor (FF) of 0.31 was produced by thermally annealed In 2 S 3 /Cu 2 SnS 3 stack with an absorber layer sulfurized for 40 min. • Cu 2 SnS 3 films were grown by sulfurization of sputtered-Cu and Sn precursor stacks. • In 2 S 3 buffer layer was deposited on absorber by RF magnetron sputtering technique. • Tetragonal and monoclinic phases of Cu 2 SnS 3 co-existed in the films. • In diffused from In 2 S 3 buffer into Cu 2 SnS 3 absorber to a certain depth. • The device based on thermally annealed In 2 S 3 /Cu 2 SnS 3 stack showed a PCE of 3.12 %. [ABSTRACT FROM AUTHOR]