1. Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity.
- Author
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Shen, Shijie, Zhang, Huanhuan, Xu, Aijiao, Zhao, YuYi, Lin, Zhiping, Wang, Zongpeng, Zhong, Wenwu, and Feng, Shangshen
- Subjects
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PHOTOCATALYSTS , *ELECTRON work function , *BAND gaps , *VISIBLE spectra , *ELECTRIC fields , *CATALYTIC activity - Abstract
• A series of BiVO 4 samples composited with NiSe 2 nanosheets were prepared through a facile solvothermal method. • The photocatalytic degradation rate of RhB of the optimized sample reaches 11 times higher than that of pure BiVO 4. • The Schottky junction derived from the discrepancy of work function accelerates the separation of photogenerated carriers. • The interaction at the interface reduces the band gap of BiVO 4. The rapid recombination of photogenerated carriers limits the photocatalytic activity of BiVO 4. Here, we grew NiSe 2 nanosheets on the surface of BiVO 4 through a facile solvothermal method to construct a Schottky junction. Due to the discrepancy of work function, electrons at the interface are transferred from BiVO 4 to NiSe 2 , thereby forming a built-in electric field. In virtue of the built-in electric field and the good conductivity of NiSe 2 , the photo-generated carriers can be quickly separated and transferred. In addition, the interaction at the interface reduces the band gap of BiVO 4 , which increases the absorption of visible light. These above benefits improve the photocatalytic performance. The photocatalytic reaction under visible light shows that the degradation rate of RhB for 9 mol% NiSe 2 composited BiVO 4 increases by 11 times compared with pure BiVO 4. The simplicity of the preparation method and the significantly improved performance show the enormous potential of NiSe 2 to be coupled with other semiconductor photocatalysts to improve their catalytic activity. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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