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Perovskite oxides are promising electrocatalysts for oxygen evolution reaction (OER), while the rational modification on their surface may further improve the performance. Herein, through facile in situ exsolution, CoFeNi ternary alloy nanoparticles exsolved on Sr 0.9 Co 0.5 Fe 0.35 Ni 0.15 O 3-δ (SCFN) parent with embedded and well-anchored structure is proposed as an excellent electrocatalyst for OER. The strong metal-perovskite interaction caused by the exsolution generates the unique synergistic coupling effect, activating the surface oxygen to achieve oxygen species (O 2 2-/O-) and inducing abundant oxygen vacancies and multiple active sites. The electrocatalyst SCFN350, which was reduced in 10 % H 2 /Ar at 350 ℃ for 1 h, exhibits remarkable OER performance with an overpotential of 282 mV at a current density of 10 mA cm-2 in 1.0 M KOH electrolyte and good durability for 10 h in practical operation. The low Tafel slope (36.53 mV dec−1) and small charge transfer resistance (8.50 Ω) indicate its good charge transfer kinetics and electrical conductivity during OER. Our work not only reveals that a nanostructured ternary alloy phase can be exsolved from the perovskite matrix but also confirms that in situ exsolution is an effective strategy for designing OER catalysts. [Display omitted] • CoFeNi particles are exsolved on Sr 0.9 Co 0.5 Fe 0.35 Ni 0.15 O 3-δ by in-situ exsolution. • A unique synergistic effect is formed between perovskite and alloy nanoparticles. • Strong interactions cause increased oxygen vacancies and active sites. • SCFN350 shows excellent catalytic OER performance (282 mV @ 10 mA cm-2) and durability. [ABSTRACT FROM AUTHOR]

In this study, we evaluated the structural, chemical, and electrical properties of ternary alloy aluminum yttrium oxide (Al 2-x Y x O 3 ) films prepared by employing a low-cost spin-cast technique. Al 2-x Y x O 3 films annealed at 400 °C were found to possess smooth and excellent insulating characteristics compared to their binary Al 2 O 3 or Y 2 O 3 film counterparts. This superior performance of the Al 2-x Y x O 3 films as a gate insulator can be explained based on structure stabilization from the cation alloying mixing effect. The amorphous indium zinc oxide ( a -IZO) thin-film transistor (TFT) with the ternary alloy Al 0.45 Y 1.55 O 3 film exhibited a high mobility of 52.9 cm 2 /V, a low subthreshold gate swing of 0.19 V/decade, a threshold voltage of −0.51 V, a high I ON/OFF ratio of 4 × 10 6 , and good hysteresis-free stability, suggesting that the solution-based Al 0.45 Y 1.55 O 3 dielectric film is an attractive candidate as a gate dielectric for high-performance and low-cost a -IZO TFTs. [ABSTRACT FROM AUTHOR]

The Bi 2 Te 3 -related binary compounds (Bi 2 Te 3 , Sb 2 Te 3 , Bi 2 Se 3 , and Sb 2 Se 3 ) and ternary alloys [(Bi 1-x Sb x ) 2 Te 3 (BST, 0 ≤ x ≤ 1) and Bi 2 (Te 1-y Se y ) 3 (BTSe, 0 ≤ y ≤ 1)] are known as the high performance room temperature thermoelectric materials. Here, for the first time, we systematically study the thermoelectric transport properties of BST and BTSe alloys by calculating their thermoelectric power factor (PF) as a function of alloy composition ratio x and y, carrier concentration n , and the absolute temperature T. The band valley degeneracy and the band gap are critical to determine the thermoelectric transport properties of ternaries. We find that PFs of p-type BST are comparable to those of binaries, while those of n-type BTSe are not, due to the band structure similarity. And the p-type BST performances are superior to the n-type BTSe due to the longer carrier relaxation time, transport anisotropy, and the band valley degeneracy. We also find that the optimal carrier concentrations which maximize the PFs ( n opt ) depend on the ternary composition and the transport direction. The bipolar effect is found to be less significant for n-type BTSe due to the large band gap and the large n opt . For p-type poly-crystalline BST, the n opt is between 3 and 4 × 10 19 cm −3 and it is achievable by Sb alloying and controlling the concentration of intrinsic defect. However, for n-type polycrystalline BTSe, n opt is ranging between 6 × 10 19 cm −3 and 1 × 10 20 cm −3 and thereby we need additional extrinsic dopant beyond Se alloying. The defect formation energy calculations reveal that Cl, Br, and I impurities are potential candidates for n-type carrier sources without forming any compensating defect, while F as well as Au is the compensating defect. [ABSTRACT FROM AUTHOR]

High-quality ternary ZnS x Se 1-x nanowires (NWs) with tunable band-gaps were synthesized by a chemical vapor deposition (CVD) method. Photoluminescence (PL), absorption and Raman spectra were carried out to study their optical properties, revealing that the band-gaps of ZnS x Se 1-x NWs can be accurately controlled and cover the entire range from 2.65 eV to 3.7 eV by changing the component ratio. Optoelectronic properties were further studied by constructing photodetectors (PDs), which exhibited a high responsivity of 1.5 × 10 6 A W −1 , a photoconductive gain of 4.5 × 10 6 and fast response speed of 520/930 μs. Such high performances are superior to the previous reported results, indicating these ternary ZnS x Se 1-x nanostructures will have great potential applications in nano-optoelectronic devices. [ABSTRACT FROM AUTHOR]

Various applications benefit from the use of compounds combining lanthanides and 3 d metals because of their fundamental physicochemical properties. To tune compositions for dedicated applications and to overcome the criticality of raw materials or geopolitical tension, a better understanding of the binary, ternary and even quaternary systems is needed. The present work focuses on the ternary Mn-Ni-Sm system, which is particularly interesting for energy storage applications as it forms hydrogen absorbing intermetallic compounds. The fruitful combination of standard X-ray diffraction, anomalous X-ray diffraction close to the Mn 3 d edge, X-ray absorption near edge structure, electron probe micro-analysis and first-principles calculations provides a better understanding of the physicochemical properties and phase equilibrium of this ternary system. In particular, the atomic substitution of Mn atoms in the Ni sites has been investigated for the stacking AB 2 / AB 5 Sm 2 Mn y Ni 7- y system. The Mn atoms substitute preferentially in the AB 5 sub-units, whereas Sm vacancies are observed in the AB 2 sub-units inducing an antagonist variation in cell volume units. In the SmMn y Ni 12- y system, the preferential localization of Mn atoms has been highlighted in site 8 i for the SmMn 4 Ni 8 compound. [Display omitted] • Experiments and first-principles calculations combination to study Mn-Ni-Sm system. • Localization of Mn atoms through anomalous diffusion under synchrotron radiation. • Linear correlation between Sm sub-occupancy and Mn substitution for Sm 2 Mn y Ni 7- y stacking alloys. [ABSTRACT FROM AUTHOR]

Abstract: Sn–40.5wt%Pb–2.6wt%Sb ternary alloy was directionally solidified with a constant temperature gradient (G =18K/mm) and growth rates ranging from 1μm/s to 30μm/s. Experimental results indicated that the lamellar structure consisted of Pb-rich and Sn-rich phases. The lamellar spacings (λ) and microhardness (H V) were measured and the H V increased with increasing growth rate (V) or decreased with increasing lamellar spacing. The dependences of λ and H V on V were determined by using a linear regression analysis. The relationships between the λ, V and H V were given as: , and , respectively. The fitted exponent values were in accordance with the previous experimental results obtained from Sn–Pb alloys and In–Bi–Sn ternary alloys. [Copyright &y& Elsevier]

Abstract: The present paper reports results on the Gd-doped Co–Cu granular alloys and metallic glasses prepared by different processing methods. The main aim of this research was to produce a ternary alloy which radically changes its magnetoresistance (MR) properties below critical temperature. A detailed study on the evolution of the structure and phase separation is presented basing on X-ray diffractometry (XRD) analysis and scanning electron microscopy (SEM) observation. MR was measured by means of a two point probe method in magnetic field using a new experimental device which was patented thereafter. [Copyright &y& Elsevier]

Abstract: In–21.5at.% Bi–17.8at.% Sn ternary alloy which has 333K melting point was directionally solidified upward with a constant temperature gradient (G =0.91K/mm) in a wide range of growth rates (3.2–157.1μm/s) with a Bridgman type directional solidification furnace. The lamellar spacings (λ) and microhardness values (H V) were measured from both transverse and longitudinal sections of the samples. The dependence of lamellar spacings (λ) and microhardness (H V) on the growth rate (V) was determined by using linear regression analysis. According to these results, it has been found that the value of λ decreases with the increasing value of V and whereas, the value of H V increases for a constant G. The values of λ 2 V were determined by using the measured values of λ and V. The results obtained in this work have been compared with the previous similar experimental results obtained for binary or ternary alloys. [Copyright &y& Elsevier]

Abstract: A method to extrapolate the thermodynamic properties of quaternary alloys from constitutive binary systems is presented. The method is based on Miedema''s theory, and the asymmetry of thermodynamic properties of constitutive binary alloys is considered in the present model. The dependence of asymmetric constituent on the choice in Toop model has been overcome. This method has been applied to calculate the enthalpies of formation for ternary alloys. In the present work, the proposed method is used to calculate the mixing enthalpies of Al–Cu–Ni–Zr quaternary alloys and its constitutive subsystems. The good agreement between calculation and experimental data indicates that the present method is reasonable for predicting the thermodynamic properties of multi-component system. [Copyright &y& Elsevier]

Abstract: A method to estimate the thermodynamic properties of ternary alloys from those of constitutive binary alloys was proposed. The thermodynamic data of binaries were calculated by Miedema''s theory. The asymmetry of constitutive binary alloys in the ternary system was considered in the present extrapolating procedure. The dependence of asymmetric constituent on the choice in Toop''s model was overcome. The present method was used to calculate the formation enthalpies of Fe–Ni–V alloys. The agreement between the calculation and experiment is reasonable. So the formation enthalpies of Fe–Al–RE (RE=lanthanide metal) ternary alloys were calculated with the present method. The relative stability of RE(Fe1−x Al x )13, RE2(Fe1−x Al x )17 and RE5(Fe1−x Al x )17 were also studied with the present method. [Copyright &y& Elsevier]

The synthesis of elevated-temperature intermetallic powders such as the ternary Al–Cu–Fe and Al–Si–Fe alloy powders was carried out using a novel solid–liquid reaction milling technique. In comparison with that of high-energy ball milling, the phase formation law of ternary alloys by this technology was studied. Moreover, the reaction mechanism and advantages were discussed. [Copyright &y& Elsevier]

Ternary alloyed and tunable band CdS 1−x Se x quantum dots (QDs) were prepared via successive ionic layer absorption and reaction (SILAR) method. The as-prepared photoanodes at different concentrations were characterized for structural, surface morphological, optical and electrical analysis. The result indicated that the photoresponse region and energy band of prepared CdS 1−x Se x QDs could be varied by controlling the ratios of S and Se. An aqueous solution of polysulfide electrolyte acted as redox mediator. The QDs size were varied from 10.14 nm to 3.362 nm confirms the quantum confinement effect. The highest and lowest photo conversion efficiency (η) of TiO 2 /ZnS/CdS 1−x Se x /ZnS quantum dots-sensitized solar cells (QDSSCs) using CuS counter electrode was obtained 5.12% and 3.43%, respectively. Developing the ZnS layer between the TiO 2 /QDs and at the interface of QD/electrolyte helps to suppress the charge recombination rate and provide the potential barrier between QDs and electrolyte.The photoconversion efficiency was evaluated by using a solar simulator under illumination with an AM 1.5 G spectrum having light intensity of 100 mWcm−2. These results are encouraging and reveals that tunable energy band QDs controlled by the ratio of atoms can contribute an effective approach for developing the higher efficiency of QDSSCs. [Display omitted] • Synthesis of TiO 2 /ZnS/CdS 1−x Se x /ZnS QDSSC at different molar ratio by SILAR method. • ZnS layer is act as passivation layer deposited on TiO 2 /ZnS/CdS 1−x Se x by SILAR method. • CuS layer coated on FTO glass act as counter electrode. • The highest power conversion efficiency was found 5.12% for TiO 2 /ZnS/CdS 1−x Se x /ZnS QDSSC. [ABSTRACT FROM AUTHOR]

• YSZ-modified stainless steel allowed to obtain thinner PdAu and PdAuAg membranes. • The PdAuAg membrane show lower inhibition under CO/H 2 O containing stream. • H 2 permeance was fully recovered after removal of CO/H 2 O from the feed. • Exposure to CO/H 2 O mixtures induces surface Ag segregation on the PdAuAg film. PdAu and PdAuAg alloy membranes were synthesized on top of YSZ-modified planar porous stainless steel supports by electroless deposition. A uniform, continuous and smooth coverage was observed after three YSZ deposition calcination cycles, with neither uncovered zones nor detachment after calcination at 673 K. Through this modification procedure, we could obtain thinner and more robust PdAu and PdAuAg alloy membranes. These membranes showed higher hydrogen permeance during the evaluations (623–723 K) and high thermal stability during the long-term stability test. The PdAu and PdAuAg membranes exhibited a good performance during the exposure to CO/H 2 O steam mixture. Contrary to the PdAu membrane, where no significant change on the atomic surface composition was observed, silver segregation was evidenced on the PdAuAg membrane after exposure to CO/H 2 O steam mixture. [ABSTRACT FROM AUTHOR]

We report the annealing-induced exchange bias in Fe–Cu–Pt based heterostructures with Cu as an intermediate layer (Fe/Cu/Pt heterostructure) and as a capping layer (Fe/Pt/Cu heterostructure). The exchange bias (shift in the hysteresis loop along the field axis) observed at room temperature (300 K) is found to be dependent on the annealing temperature. We obtained positive exchange bias of ∼ +120 Oe on annealing both the heterostructures at 400 °C, while on annealing these heterostructures at 500 and 600 °C a negative exchange bias of ∼ −100 Oe was observed. X-ray and polarized neutron reflectivity measurements show the evolution of the depth-dependent structure and magnetic properties of the heterostructures on annealing at different temperatures and revealed the coexistence of soft and hard (alloy) magnetic phases across the thickness of the films. Rapid and long-range interdiffusion at interfaces on annealing the systems at a temperature 〉 400 °C resulted into the formation of a ternary alloy phase. The observation of annealing-induced positive and negative exchange bias effect is dependent on the applied field and majority of the magnetic phase (hard/soft), present in the system. This annealing dependent coupling could give rise to more advanced applications of hard/soft ferromagnetic heterostructures. • Interface exchange interaction at the interface of hard/soft magnetic phases due to annealing. • Coexistence of soft and hard (alloy) magnetic phases across the thickness of the films. • Positive and negative exchange bias at different annealing temperature. • Rapid, long-range interdiffusion and ternary alloy formation at interfaces on annealing 〉 400 °C. [ABSTRACT FROM AUTHOR]