1. New solid-state die-attach method using silver foil bonded on aluminum substrate by eutectic reaction
- Author
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Chin C. Lee and Shao-Wei Fu
- Subjects
Materials science ,Mechanical Engineering ,Metals and Alloys ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Die (integrated circuit) ,0104 chemical sciences ,Thermal conductivity ,chemistry ,Mechanics of Materials ,Aluminium ,Materials Chemistry ,Eutectic bonding ,Composite material ,0210 nano-technology ,Layer (electronics) ,FOIL method ,Eutectic system - Abstract
The high thermal conductivity, lightweight, and low cost of aluminum (Al) make it a promising substrate material for high power electronic and photonic packages and housings. It is particularly attractive for aerospace and space applications due to its lightweight. A main challenge for these applications is poor bondability. The native aluminum oxide (Al2O3) prevents aluminum from bonding by using popular die-attach materials such as solders. Zincating process is often needed to dissolve the Al2O3 layer and deposit a protection zinc layer which provides a basis for subsequent metallization or soldering process. However, the zincating and metallization processes could increase the processing cost and bring more reliability issues. In this research, a novel Ag foil bonding technique has been developed to bond Ag foils directly to Al substrates to produce Ag-cladded Al substrates. Two Ag-Al bonding processes are developed: solid-state and eutectic. Subsequently, Si chips are bonded to the Ag-cladded Al substrates using solid-state process at 300 °C without any additional die-attach material. For the Ag-Al bonding processes, no surface treatment is applied to Al substrates to remove the native Al2O3 layer. In the Ag-Al soli-state bonding process, Ag and Al atoms inter-diffused through the thin Al2O3 to react and form Ag2Al and Ag3Al compounds. In the Ag-Al eutectic bonding process, Ag2Al+(Al) eutectic structure forms at the Ag/Al interface without Ag3Al compound formation. The native Al2O3 layer, a potential fracture path, is broken into pieces during eutectic reaction and possibly dispersed into the eutectic structure. Shear test results of Si/Ag/Al joint samples far exceed the military criterion (MIL-STD-883H method 2019.8). The Si/Ag/Al structures break either along the Ag/Al interface or within the Si chip. With the advantages of high thermal conductivity, high reliability, lightweight, and process simplicity, the Ag-cladded Al structures should be highly valuable for applications in packages and housings where lightweight and high heat-conducting are necessary.
- Published
- 2019
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