1. Defects in Cd1−xMnxGeAs2 lattice
- Author
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Witold Dobrowolski, Nebojša Romčević, Maja Romcevic, Lukasz Kilanski, Sergei Fedorovich Marenkin, I. V. Fedorchenko, and Jelena Trajic
- Subjects
010302 applied physics ,Materials science ,Condensed matter physics ,Mechanical Engineering ,Doping ,Metals and Alloys ,02 engineering and technology ,Crystal structure ,021001 nanoscience & nanotechnology ,01 natural sciences ,Spectral line ,Crystallography ,symbols.namesake ,Tetragonal crystal system ,Far infrared ,Mechanics of Materials ,Lattice (order) ,0103 physical sciences ,Materials Chemistry ,symbols ,0210 nano-technology ,Raman spectroscopy ,Spectroscopy - Abstract
CdGeAs 2 is a promising material for optical applications. It has the wide transparency range between 2.3 and 18 μm except harmful absorption region at 5.5 μm. Its presence is related to the crystal lattice quality. The measurements of Raman and far infrared reflectivity spectra of the series of Cd 1− x Mn x GeAs 2 samples (0 ≤ x ≤ 0.037) were carried out in spectral range from 60 to 400 cm −1 , at room temperature. Beside all expected optical modes three defect modes are registered at about 125, 170 and 235 cm −1 . Their intensities are related to tetragonal distortion of lattice (Δ) so we connected them with lattice defects Ge As , usually formed in this material, and CdAs 2 and Cd 3 As 2 clusters whose characteristic frequencies match these values. Antisite defects Ge As are connected to energy level at about 200 meV and to absorption at 5.5 μm. Based on obtained results we can conclude that doping with small amount of manganese ( x = 0.004) results in slight deformation of CdGeAs 2 crystal lattice and consequently considerably reducing the formation of antisite defects Ge As .
- Published
- 2016
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