1. p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide
- Author
-
Shun Han, Youming Lu, Xinke Liu, Yujia Li, Junpeng Zhang, Peijiang Cao, Lin Chen, Wangying Xu, Deliang Zhu, Lingjiao Zhang, and Wenjun Liu
- Subjects
Electron mobility ,Materials science ,Annealing (metallurgy) ,business.industry ,Mechanical Engineering ,Nickel oxide ,Non-blocking I/O ,Metals and Alloys ,Oxide ,02 engineering and technology ,Dielectric ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Amorphous solid ,chemistry.chemical_compound ,chemistry ,Mechanics of Materials ,Thin-film transistor ,Materials Chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
Transparent amorphous oxide semiconductor (TAOS) represented by a-InGaZnO (IGZO) has achieved their commercial success in the display industry due to its superior material properties (e.g. high mobility (>10 cm 2 V −1 s −1 ), good transparency and excellent uniformity). However, TAOSs with excellent electrical properties are all n-type due to the particular electronic structures of oxide materials. The absence of high performance p-type TAOS limits the device application such as complimentary circuit and is now the largest drawback for oxide electronics. Here, we propose a low-temperature solution method to fabricate p-type transparent amorphous nickel oxide (NiO). The influence of processing parameters such as annealing temperature, precursor concentration, source/drain electrode, and dielectric layer is systematically investigated to maximum the NiO device performance. The optimized NiO TFT exhibits outstanding p-channel behavior, including a high hole mobility of 6.0 cm 2 V −1 s −1 , remarkable on/off current modulation ratio of ∼10 7 , and good subthreshold swing of 0.13 V/decade. The high performance NiO device is attributed to the synergistic optimization of annealing temperature, channel thickness, source/drain electrodes, and dielectric materials. The properties of our p-type TAOS are comparable with that of traditional n-type TAOS.
- Published
- 2019