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Chromium tellurides have triggered tremendous investigations in physics and materials science, where their unique properties offer excellent opportunities for spintronic applications. Here, we report anisotropic magnetoresistance (AMR) of ferromagnetic CrTe single crystal flake grown by chemical vapor deposition. An individual hexagonal flake exhibits an easy magnetization axis along its normal direction, and cooling from room temperature to low temperature, its electrical resistance measured with the magnetization parallel to current geometry is larger than that for the perpendicular to the current geometry, indicating the presence of an AMR behavior. The AMR ratio has been found to increase with decreasing temperature and is 5.2% at 5 K, comparable with general magnetic transition metal and alloy. This suggests CrTe single crystal flake to be a promising magnetic material for spintronics applications.

Using the vibrating sample magnetometer and ex situ vector network analyzer ferromagnetic resonance, the static and dynamic magnetic properties of Tb (4 nm)/Cr ( t Cr )/Ni 80 Fe 20 (12 nm) trilayers with different thickness of Cr layer (from 0.2 to 4.0 nm) were investigated comparing with those of Ni 80 Fe 20 film. From the results of in-plane static magnetic hysteresis loops, we analyzed the soft magnetic properties and in-plane anisotropy, along with obtaining the saturation magnetization ( M s ) which shows no obvious reducing and a modulation akin to RKKY coupling. By fitting the relationship of resonance field and linewidth versus resonance frequency, the effective magnetization 4π M eff , gyromagnetic ratio γ , and effective damping coefficient ( α eff ) were extracted. It is worthwhile to mention that the inserting of ultrathin Cr layer (0.2 nm) enhanced the above parameters obviously, which then backed down towards their values in Ni 80 Fe 20 film with increasing the thickness of Cr layer as a result of the weakening magnetic proximity effect and the decreasing spin-pumping effect in trilayers. Finally, they became flattening with the Cr layer thicker than 1 nm where oscillations are also observed in the value of γ and α eff. Interestingly, the oscillations in α eff and γ are consistent with each other, which implies the damping mechanism mainly related to the spin-orbit coupling originating from the indirect interaction between Tb and Ni 80 Fe 20 . In addition, the inhomogeneous broadening (Δ H 0 ) were determined to be very small which further ascertain the accurate of the α eff .

The strong (111)-textured ZnxFe3−xO4 thin films were grown on SiO2-terminated silicon substrates using pulsed laser deposition. X-ray diffraction and high resolution transmission electron microscopy clearly show the column growth structure along the film thickness direction in [111] crystalline orientation for every grain column. With the introduction of texture induced magnetic anisotropy in the free energy density model, we quantitatively determined the doping effect on the various anisotropies in (111)-textured ZnxFe3−xO4 films. The mechanisms of ferromagnetic resonance linewidth of ZnxFe3−xO4 thin films are investigated by the theoretical fitting, in which considering the contributions from intrinsic spin-orbit coupling, extrinsic compositions from two-magnon scattering and inhomogeneous broadening. It is found that the Gilbert damping coefficient α increases with increasing Zn substitution x from 0 to 0.3, indicating that the spin-orbit coupling of the ZnxFe3−xO4 thin films increases with the introduction of Zn impurities.

Interfacial effect of amorphous cobalt-iron-boron (Co60Fe20B20) films deposited on GaAs(001) by DC magnetron-sputtering has been precisely studied. In-plane uniaxial magnetic anisotropy (UMA) as a significant magnetic property has been found in Co60Fe20B20/GaAs heterostructure and the UMA field (Hu) of (∼75 Oe) is achieved. Magnetic Schottky barrier contact has been achieved by current-voltage (I–V) characteristic through the interface with a barrier height of 0.72 eV, which is an appropriate for tunneling injection of spin current from ferromagnet to semiconductors in spin-injection devices.