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The Hall electron mobility in sulfur-doped 4H-SiC over a wide range of S concentration was investigated. Sulfur (S) works as a double donor in SiC. The electron concentration in the S + -implanted layers saturates when the S concentration exceeds 1 × 10 18 cm − 3 and the net donor concentration of the S + -implanted layer with S concentration of 1 × 10 19 cm − 3 is 4 × 10 18 cm − 3 , indicating that the solubility or activation limit of S + -implanted SiC is about 2 × 10 18 cm − 3 . The S + -implanted SiC with a S concentration of 1 × 10 18 cm − 3 exhibits an electron mobility of 598 cm 2 /V s, which is more than twice as high as that in N-doped SiC with the same doping concentration (268 cm 2 /V s). The temperature dependence of the electron mobility in S + -implanted SiC is reproduced in the wide temperature range by the calculation of the electron mobility adopting the helium atom model for neutral-impurity scattering. [ABSTRACT FROM AUTHOR]