1. Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies.
- Author
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Kumar, Ravi, Singh, Fouran, Angadi, Basavaraj, Choi, Ji-Won, Choi, Won-Kook, Jeong, Kwangho, Song, Jong-Han, Khan, M. Wasi, Srivastava, J. P., Kumar, Ajay, and Tandon, R. P.
- Subjects
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ZINC oxide thin films , *PHOTOLUMINESCENCE , *LOW temperatures , *SURFACES (Technology) , *COBALT - Abstract
Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1×1012 ions/cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t2g and 2eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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