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Indium phosphide is widely used in electronics and photovoltaic devices due to its high electro-optical conversion efficiency, high electron mobility, and good radiation resistance. Defects are the main limitation for the performance of InP devices. In this work, based on hybrid functional with finite size correction, electronic properties of intrinsic and H-related defects have been investigated in InP. We found that PIn defect is the most stable intrinsic defect with the lowest formation energy. Defect signals detected experimentally are defined by our calculated results. Experimentally observed electron traps with the energy level of EC −0.66 eV and EC −0.68 eV are ascribed to the transition level ɛ(−1/−2) and ɛ(−2/−3) of In vacancies. The hydrogenated vacancies in InP have been systematically reported in the present work. Formation energies of H-related defects indicate that hydrogen atoms prefer to bind to In vacancy than P vacancy. The formation energy of In vacancy decreases with the addition of H, while that of P vacancy increases. For hydrogenated In vacancies, it captures fewer electrons than bare In vacancies when the Fermi level is close to CBM. Especially for the VIn −3H structure, it is 0 charge state in all Fermi levels so that it will not tend to capture electron or hole. Our work is helpful to explain experimental phenomena and radiation-induced damages and improve the performance of InP devices. [ABSTRACT FROM AUTHOR]

Two-dimensional molybdenum disulfide (2D MoS2) has great application prospects in the field of optoelectronic devices. Defect engineering is an effective way to regulate the electronic and optical properties of 2D MoS2. However, defect controlling on 2D materials remains a major challenge. Fluorine, as the most electronegative element, may cause many interesting phenomena after doping in 2D materials. So far, there have been no reports on the effect of fluoride ion (F− ion) irradiation on 2D material properties. In this paper, the monolayer MoS2 (ML-MoS2) synthesized by the chemical vapor deposition method was taken as the research object, and defects with controllable densities were produced by 30 keV F− ion irradiation, in which the defects were dominated by S vacancies. Based on Raman, photoluminescence, and x-ray photoelectron spectroscopy, it is shown that the ion irradiation-induced defects significantly affect the optoelectronic properties of MoS2. We also observed the p-doping of ML-MoS2, which is attributed to the introduction of F− ions and the electron transfer from MoS2 to O2 at defect adsorption sites. This study reveals that 2D materials could be effectively doped or compensated using irradiation technology, potentially fabricating novel 2D electrical devices through defect engineering. [ABSTRACT FROM AUTHOR]

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to − 0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques. [ABSTRACT FROM AUTHOR]

The weak peak at ultraviolet region observed by Zhu and Zhang in gold nanoshells should not be ascribed to the coupling of the “quadruple resonance,” which may be interpreted in terms of the contributions of the interband transitions in the Au layer. In addition, the quasistatic theory used by Zhu and Zhang is not suitable for investigation of the optical properties of gold nanoshells when the total radius of the shell is larger than the quasistatic limit. Furthermore, it is obvious that the strength and position of the local field factor peak should vary with the radial distance and the polar angle. [ABSTRACT FROM AUTHOR]

The potential and limitations of Rayleigh wave spectroscopy to characterize the elastic depth profile of heterogeneous functional gradient materials are investigated by comparing simulations of the surface acoustic wave dispersion curves of different profile-spectrum pairs. This inverse problem is shown to be quite ill posed. The method is then applied to extract information on the depth structure of a glass-ceramic (alumina) functionally graded material from experimental data. The surface acoustic wave analysis suggests the presence of a uniform coating region consisting of a mixture of Al2O3 and glass, with a sharp transition between the coating and the substrate. This is confirmed by scanning electron microscope with energy dispersive x-ray analysis. [ABSTRACT FROM AUTHOR]