1. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy.
- Author
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Wang, Lijun and Giles, N. C.
- Subjects
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PHOTOLUMINESCENCE , *SPECTRUM analysis , *TEMPERATURE , *EXCITON theory , *CRYSTALS , *PHONONS - Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are used to track the temperature dependence of the A exciton energy (E[SUBXA]) in undoped bulk ZnO crystals grown by the seeded-chemical-vapor-transport method. For T>150 K, the edge emission becomes broad as the A exciton recombination and its longitudinal-optical (LO) phonon replica become superimposed. We use PLE to determine the temperature dependence of E[SUBXA] by monitoring the broad green emission commonly observed in as-grown ZnO crystals, and thus have established the energy difference between the E[SUBXA] and PL emission peak energies. The PL emission at 3.26 eV at room temperature is shown to be offset by about 50 meV to lower energy than the actual E[SUBXA] transition. The temperature dependence of the energy difference between the E[SUBXA] and PL peaks is compared)with predictions based on the lineshape function for the E[[SUBXA]- LO recombination. At 300 K, the PL is predominantly composed of E[SUBXA]- LO recombination. Further, the temperature dependence of the E[SUBXA] transition energy can be described using standard expressions and the Debye and Einstein temperatures are found to be 700±30 and 240±5 K, respectively. The slope of the E[SUBXA] versus T curve for ZnO approaches a constant value of De[SUBXA]/Dt=-0.35 meV/K near room temperature. [ABSTRACT FROM AUTHOR]
- Published
- 2003
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