1. Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement.
- Author
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Sant, S., Mao, M., Kools, J., Koi, K., Iwasaki, H., and Sahashi, M.
- Subjects
SEMICONDUCTOR films ,MAGNETORESISTANCE ,ION bombardment ,MAGNETIC properties - Abstract
Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2001
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