1. ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors.
- Author
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Ma, Chenyue, Chen, Hongwei, Zhou, Chunhua, Huang, Sen, Yuan, Li, Roberts, John, and Chen, Kevin. J.
- Subjects
- *
MODULATION-doped field-effect transistors , *FIELD-effect transistors , *FLUORINE , *PHONON scattering , *ELECTRONS - Abstract
This paper presents a study of the ON-state gate overdrive of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology. A critical gate forward voltage (VGC) is observed, beyond which the channel turn-on voltage (or threshold voltage) of the devices exhibits a persistent and nonrecoverable negative shift. This phenomenon is explained by a proposed physical model based on the impact ionization of the F ions in the barrier layer by hot electron injection. The proposed physical model is further validated by the temperature-dependent characterization of VGC that shows an eventual stabilization at higher temperatures (>125 °C), owing to the efficient relaxation of hot electrons by phonon scattering. The determination of VGC provides valuable guideline for the design of gate drive circuits of GaN power circuits [ABSTRACT FROM AUTHOR]
- Published
- 2011
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