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We report measurements of the Meissner screening profile in a Nb (300 nm)/ Al 2 O 3 thin film using 8 Li β -detected nuclear magnetic resonance (β -NMR). The NMR probe 8 Li was ion-implanted into the Nb film at energies ≤ 20 keV, corresponding to mean stopping depths comparable to Nb 's magnetic penetration depth λ. 8 Li 's strong dipole–dipole coupling with the host 93 Nb nuclei provided a "cross-relaxation" channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate 1 / T 1. From a fit of the 1 / T 1 data to a model accounting for its dependence on temperature, magnetic field, and 8 Li + implantation energy, we obtained a magnetic penetration depth λ 0 = 51.5(22) nm, consistent with a relatively short carrier mean-free-path ℓ = 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step toward using 8 Li β -NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators. [ABSTRACT FROM AUTHOR]