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Presents a study which detailed a comparative study on the damage induced in boron-doped silicon by contact etching. Comparison of approaches to the study; Description of the structure-chemistry combinations used; Damage examined in the silicon substrates of both structures; Techniques used in the examination of the types of damage.

Presents a study which detected and compared localized states produced in poly-silicon/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching. Experimental procedure; Results of the study; Conclusions.

Presents information on a study which examined evidence for hydrogen passivation and depassivation of plasma-charging-induced defects in gate oxides and a oxide/silicon interfaces in submicron n-channel transistors. Methodology of the study; Results and discussion; Conclusion.