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We develop a two-carrier Hall effect model-fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density (∼ 4 × 10 13 cm − 2 ) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN heterostructure. Previous transport studies in GaN 2DHGs have reported a twofold reduction in 2DHG carrier density when cooled from room to cryogenic temperature. We demonstrate that this apparent drop in carrier density is an artifact of assuming one species of charge carrier when interpreting Hall effect measurements. Using an appropriate two-carrier model, we resolve light hole (LH) and heavy hole (HH) carrier densities congruent with self-consistent Poisson-k ⋅ p simulations and observe an LH mobility of ∼ 1400 cm 2 /Vs and HH mobility of ∼ 300 cm 2 /Vs at 2 K. This report constitutes the first experimental signature of LH band conductivity reported in GaN. [ABSTRACT FROM AUTHOR]

Radio Frequency Capacitively Coupled Plasma (RF-CCP) exhibits excellent spatial uniformity, high stability, and the capability to generate plasma over large areas, making it highly promising for applications in CO2 resource utilization in space environments. This study investigates the CO2 conversion products under two typical discharge modes (α and γ modes) of RF-CCP and their product selectivity under Martian nominal pressure. The results indicate that the optical emission spectra in both α and γ modes contain C O 2 + , O, and CO spectral bands/lines. The overall spectral line intensity is enhanced in the γ mode compared to the α mode, indicating a higher electron density and ionization degree in the γ mode. The key product, CO, is primarily generated through electron collisions with CO2, while O2 is produced via the dissociative recombination of electrons with C O 2 +. After the transition from α to γ mode, the content of CO2 decreases, but the concentrations of electrons and C O 2 + increase significantly. This results in CO being the dominant product in the α mode, while in the γ mode, the overall abundance of products is higher and there is a greater selectivity for O2. Therefore, by controlling the discharge mode of RF-CCP, it is possible to achieve targeted regulation of the CO2 conversion products. [ABSTRACT FROM AUTHOR]

Despite the widespread applications of high-pressure plasma in semiconductor and display industry, such as deposition and ashing process, the use of cutoff probes for diagnosing high-pressure plasma was rarely studied. In this study, we investigated a method of measuring electron density in a cutoff probe using the resonance peak in a high-pressure plasma environment. This method is validated through both electromagnetic wave simulations and experimental methodologies. Our findings reveal that the proposed method demonstrates discrepancies of less than 1.47% compared to the input plasma frequency in the results of electromagnetic wave simulations at a gas pressure of 10 mTorr, while at 2.5 Torr, it exhibited a maximum discrepancy of 13.3% when selecting resonance frequencies lower than the electron–neutral collision frequency. This discrepancy at high pressure is reduced to within 1.92% by selecting a resonance frequency higher than the electron–neutral collision frequency. Also, the feasibility of these electron density measurements has been confirmed under conditions of high gas pressure where the cutoff frequency is not measurable, as evidenced by both simulation and experimental results. Our research on the diagnostic methods in high-pressure plasmas could significantly enhance the measurement and interpretation of plasma parameters in various industrial processes. [ABSTRACT FROM AUTHOR]

The density, surface tension, and viscosity of liquid Zr76.0−xFe24.0Nbx (x = 6.6, 10.0, 15.0) alloys were measured by using the electrostatic levitation technique. The maximum undercooling achieved for these alloys was 151, 91, and 119 K, respectively. To evaluate the thermophysical properties in a wider temperature range, molecular dynamics simulations were performed by using the embedded atom method potential. Both measured and simulated results indicate that the liquid density increases linearly with decreasing temperature and also gradually rises with increasing Nb content. Additionally, the simulated and experimental results for surface tension and viscosity were analyzed. In all three alloys, surface tension increases linearly with decreasing temperature. The relationship between viscosity and temperature follows an Arrhenius-type equation, with both surface tension and viscosity increasing as the Nb content increases. The calculated results of density, surface tension, and viscosity are in good agreement with the experimental results. Furthermore, the specific heat, emissivity, and diffusion coefficient of liquid alloys were calculated. The specific heat for liquid Zr76.0−xFe24.0Nbx (x = 6.6, 10.0, 15.0) alloys is (36.47 ± 1.68), (35.20 ± 2.28), and (41.04 ± 3.73) J mol−1 K−1, respectively. Emissivity decreases linearly with temperature. The diffusion coefficient decreases, while the diffusion activation energy increases with a higher Nb content. [ABSTRACT FROM AUTHOR]

The development of new analog computers based on analog signals of electromagnetic or elastic waves has become a hot research topic in recent years. In this Letter, based on the concept of quantum state transfer, we study the process of energy transfer between acoustic cavities. Through the transformation from the temporal domain to the spatial domain, we further study the process of energy transfer between acoustic waveguides, and then we realize the applications of energy distributors and limiters in the acoustic system, which are the functional devices of wireless communication technology in new analog acoustic computers. We both simulationlly and experimentally demonstrate the effectiveness of the two applications. The energy distributor and limiter we proposed have the advantages of a relatively wide operating frequency range and adjustability. Our work shows the transfer mechanism of acoustic energy between different structures, which increases its potential application value in new analog acoustic computers. [ABSTRACT FROM AUTHOR]

We investigate the interaction between two magnetic layers separated with a normal metal insertion layer (Ti, Pt, and Ru) using x-ray ferromagnetic resonance (XFMR). We measure the amplitude and phase of the ferromagnetic resonance of both layers. Our results indicate that a ferromagnetic exchange coupling between two layers is a dominant coupling mechanism for a thick insertion metal layer. Based on the exchange coupling model, we extract the smallest value of the indirect exchange coefficient of 1.2 μJ/m2, which corresponds to an exchange field of about 0.36 mT. While this value is difficult to measure with other experimental tools, we were able to measure the small value because XFMR detects a resonance phenomenon of a thin layer generated by an oscillating indirect exchange and the Oersted fields with a phase and layer resolved observation.

Based on two-component density functional theory integrated with the projector augmented-wave basis and incorporating both calculated and experimental data from Positron Annihilation Spectroscopy (PAS), this study introduces a novel method for identifying and analyzing specific types of vacancies when multiple types of vacancies are coexisting. This method was then tested on 4H-SiC irradiated by 300 keV C4+ ion beams. By calculating charge density to analyze positron annihilation lifetime spectroscopy and calculating wave functions to analyze slow positron-beam Doppler broadening spectroscopy, for the first time, silicon monovacancies (VSi) and carbon monovacancies (VC) in irradiated 4H-SiC were quantitatively detected separately, allowing them to be distinguished with high accuracy. In addition, a decreasing trend in the relative percentage of VC with increasing irradiation dose, consistent with that expected when irradiating with carbon ions, was also observed, illustrating both the effectiveness and potential of this method for broader applications in material defect analysis. This study not only addresses the challenges of identifying multiple coexisting vacancy types using PAS but also extends the applicability and depth of PAS in fields such as nuclear energy, aerospace, and semiconductors. [ABSTRACT FROM AUTHOR]

Acoustic levitation is widely used in non-container measurement and non-contact manipulation. Particles in the single-axis acoustic levitation are easily unstable in the radial direction under external perturbations. In order to explore the instability in the acoustic levitation during radial perturbations, a nonlinear acoustic levitation model considering the coupling of radial and axial vibration is proposed to analyze the dominant factors influencing the levitation stability, an acoustic levitation system consisting of a transducer and a plane reflector is established, and high-speed photography is used to observe the vibration behavior of the particle with large radial vibration and the levitation stability. The simulation results are compared and verified with the experiments, which indicate that the reduction in axial trapping stiffness due to radial vibration plays a vital role in the levitation instability. The present model can characterize the radial anti-interference ability of different levitators as well as predict the movement trajectories of levitated particles after being disturbed, which is helpful to optimize the design of acoustic levitators and provide guidance for acoustic manipulation. [ABSTRACT FROM AUTHOR]

The advancement of next-generation magnetic devices depends on fast manipulating magnetic microstructures at the nanoscale. A universal method is presented for rapid and reliable generating, controlling, and driving nano-scale skyrmioniums, through high-throughput micromagnetic simulations. Ultrafast switches are realized between skyrmionium and skyrmion states and rapidly change their polarities in monolayer magnetic nanodisks by perpendicular magnetic fields. The transition mechanism by alternating magnetic fields differs from that under steady magnetic fields. New skyrmionic textures, such as flower-like and windmill-like skyrmions, are discovered. Moreover, this nanoscale skyrmionium can move rapidly and stably in nanoribbons using weaker spin-polarized currents. Explicit discussions are held regarding the physical mechanisms involved in ultrafast manipulations of skyrmioniums. This work provides further physical insights into the manipulation and application of topological skyrmionic structures for developing low-power consumption and nanostorage devices. [ABSTRACT FROM AUTHOR]

In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR]

In this study, we examined the potential errors in plasma-density measurements using the cutoff probe method under various structural conditions, such as tip distance and length. Our studies indicate that under conditions of thin sheath thickness, the length or distance of the metal tips on the cutoff probe has a slight effect on the plasma transmission spectrum or cutoff frequency. However, under conditions with a notably thick sheath, the structure of the probe tip can cause an error of up to 2% between the measured cutoff frequency and actual plasma frequency. Consequently, for precise measurements of plasma density using the cutoff probe method, it is imperative to maintain a probe tip distance exceeding five times the sheath width and utilize a sufficiently long probe tip length. This finding is anticipated to provide essential guidelines for the design and fabrication of effective cutoff probes and enhance the accuracy of plasma-density measurements using a cutoff probe. [ABSTRACT FROM AUTHOR]

The cytoskeleton, a dynamic network of structural proteins within cells, is essential for cellular deformation and responds to external mechanical cues. Here, based on the structure of the cytoskeleton, combined with the biochemical reactions of the activator RhoA and the inhibitor F-actin, we develop a novel mechanochemical cytoskeleton model to investigate the mechanical behavior of cells. Interestingly, we find that active stress fibers exhibit diverse dynamical modes at specific inhibitor concentration thresholds. The existence of concentration differences and sustained mechanochemical feedback in activators and inhibitors trigger a global oscillation of isolated cells. In addition, under uniaxial and biaxial stretches, activators and inhibitors preferentially diffuse toward the more significantly deformed cytoskeletal elements, and their dynamic interactions regulate the cell to align with the main stretching direction. Our findings, consistent with many experimental results, provide fundamental insights into cytoskeletal remodeling and cellular mechanosensing mechanisms. [ABSTRACT FROM AUTHOR]

This study presents a comprehensive investigation of the impact of the deposition temperature on the HfxZr1−xO2 (HZO) ferroelectric layer of ferroelectric random access memory with TaN electrodes. This investigation mainly focuses on its electrical characteristics and compares the differences. It is revealed that the deposition temperature plays a crucial role in determining the crystal structure of HZO, which can exhibit a combination of tetragonal and orthorhombic phases or exist solely in one of the two phases. Furthermore, the grain size of HZO varies with the deposition temperature. These findings correspond well to the electrical measurement results, including leakage current, polarization, capacitance, and reliability tests. The study tracks the phase transition process during the operation of switching cycles when the phase transition process can be monitored as well. To better understand the observed differences, physical models that shed light on the underlying mechanisms affected by deposition temperature are proposed at the end of the article. [ABSTRACT FROM AUTHOR]

Carbon nanotubes have shown great promise for high-performance, large-area, solution processable field-effect transistors due to their exceptional charge transport properties. In this study, we utilize the spin-coating method to form networks from selectively sorted semiconducting single-walled carbon nanotubes (s-SWNTs), aiming for scalable electronic device fabrication. The one-dimensional nature of s-SWNTs, however, introduces significant roughness and charge trap sites, hindering charge transport due to the van der Waals gap (∼0.32 nm) between nanotubes. Addressing this, we explored the effects of anion doping on the spin-coated s-SWNT random network, with a focus on the influence of the small size of halogen anions (0.13–0.22 nm) on these electronic properties. Raman and ultraviolet–visible–near-infrared optical spectroscopy results indicate that smaller anions significantly enhance doping effects through strong non-covalent anion–π interactions, improving charge transport and carrier injection efficiency in s-SWNTs, especially for n-type operation. This improvement is inversely proportional to the size of the halogen anions, with the smallest anion (fluorine) effectively transitioning the electrical characteristics of the s-SWNT network from ambipolar to n-type by reducing both junction and contact resistances through anion doping, based on anion–π interaction. [ABSTRACT FROM AUTHOR]

In this study, a pure Ta diffusion layer and Ta deposition coating were diffused and deposited on the Ti6Al4V substrate by the double glow plasma surface alloying technique. The surface morphology, cross-sectional element distribution, and phases were characterized by SEM, energy-dispersive x-ray spectrometer (EDS), and XRD. Both the mechanical properties and the wear resistance were investigated through the nanoindentation test and reciprocating friction-wear test. In addition, wear simulation was also examined. Ta deposition coating showed a denser and typical cauliflower structure. The Ta diffusion layer, however, exhibited two distinct types of structure: cellular grains and a kind of structure, aggregated and white, with a greater concentration of the Ta element. The cross-sectional morphology and the EDS result showed that a metallurgical bonding was developed between the coating and substrate. In addition, based on the result of nanoindentation, the Ta diffusion layer had higher hardness, elastic modulus, and initial yield strength than that of Ta deposition coating. However, the reciprocating friction-wear result revealed that the Ta deposition coating displayed better wear resistance compared with the Ta diffusion layer due to the thin thickness and inhomogeneous Ta element concentration. The wear simulation result revealed that the stable highest contact temperature is 103.7 °C by nonlinear curve fitting, and the Ta diffusion layer showed the highest equivalent stress. [ABSTRACT FROM AUTHOR]

Quartz material irradiated by femtosecond laser has increasingly attracted widespread attention for the micro-fabrication of photonic devices. Mechanism exploration is beneficial for accelerating the digital progress of laser processing. However, the mechanism between femtosecond laser and quartz is complicated and needs further theoretical investigation. This paper established the theoretical model based on the ionization model with the Drude equation to study the space–time evolution of free electron density and its influence on the absorption coefficient, reflectivity, and ablation depth. In addition, we achieved a 10 × 10 micro-holes array with a pore size less than 10 μm, cone angle less than 2° in a 0.25 mm thick quartz on the condition of a laser pulse energy Ep = 3 μJ, scanning velocity v = 0.1 mm/s, and defocusing distance Δf = −0.3 mm via the bottom-up femtosecond laser processing. The work gives a new insight into further understanding the ablation mechanism of transparent materials etching by the femtosecond laser. It provides a practical technical scheme for preparing commercial quartz photonic devices. [ABSTRACT FROM AUTHOR]

Terahertz (THz) light, probing electronic responses near the Fermi level, is closely linked to DC transport. In this study, we investigate the in situ THz and DC conductivity of epitaxial VO 2 films near the heating-induced insulator–metal transition. We find that the THz conductivity transition occurs at lower temperatures than the DC conductivity transition, with the separation increasing with film thickness and crystallization quality. Analysis of the complex conductivity spectra attributes this separation to released carrier confinement at THz frequencies. Our findings contribute to a deeper understanding of electron dynamics in VO 2 films. [ABSTRACT FROM AUTHOR]

In this study, the influence of ceramic shield characteristics, including thickness and geometry, on the transmission spectrum and electron density measurements of a ceramic shield cutoff probe (CSC) was investigated to measure high-density or process plasma. Through electromagnetic simulations and circuit modeling, we examined the measurement characteristics of the CSC based on different ceramic shield geometries. When the ceramic shield is sufficiently thin, it does not affect the CSC wave transmission characteristics. However, for a thick ceramic shield, a cutoff frequency shift of up to 3% toward the lower side can occur. This shift is attributed to the electrical properties of the ceramic material, which can function as a parasitic capacitor. In addition, when fabricating a CSC, depending on the shape of the ceramic shield or the method used to couple it with the CSC body, a cutoff frequency shift can occur toward the lower side. The simulation results were validated through experiments, revealing a cutoff frequency shift toward the lower side of up to 18.0% in the simulations and up to 11.6% in the experiments. The findings of this study could assist in high-density or processing plasma measurements using cutoff probes. [ABSTRACT FROM AUTHOR]

Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current–voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT. [ABSTRACT FROM AUTHOR]

A superconducting Transition-Edge Sensor (TES) with low- T c is essential in high resolution calorimetric detection. With the motivation of developing sensitive calorimeters for applications in cryogenic neutrinoless double beta decay searches, we have been investigating methods to reduce the T c of an Ir film down to 20 mK. Utilizing the proximity effect between a superconductor and a normal metal, we found two room temperature fabrication recipes for making Ir-based low- T c films. In the first approach, an Ir film sandwiched between two Au films, a Au/Ir/Au trilayer, has a tunable T c in the range of 20-100 mK depending on the relative thicknesses. In the second approach, a paramagnetic Pt thin film is used to create the Ir/Pt bilayer with a tunable T c in the same range. We present a detailed study of fabrication and characterization of Ir-based low- T c films and compare the experimental results to the theoretical models. We show that Ir-based films with a predictable and reproducible critical temperature can be consistently fabricated for use in large scale detector applications.

A superconducting Transition-Edge Sensor (TES) with low- T c is essential in high resolution calorimetric detection. With the motivation of developing sensitive calorimeters for applications in cryogenic neutrinoless double beta decay searches, we have been investigating methods to reduce the T c of an Ir film down to 20 mK. Utilizing the proximity effect between a superconductor and a normal metal, we found two room temperature fabrication recipes for making Ir-based low- T c films. In the first approach, an Ir film sandwiched between two Au films, a Au/Ir/Au trilayer, has a tunable T c in the range of 20-100 mK depending on the relative thicknesses. In the second approach, a paramagnetic Pt thin film is used to create the Ir/Pt bilayer with a tunable T c in the same range. We present a detailed study of fabrication and characterization of Ir-based low- T c films and compare the experimental results to the theoretical models. We show that Ir-based films with a predictable and reproducible critical temperature can be consistently fabricated for use in large scale detector applications.

This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density when SEB occurs, the radiation damage mechanism of SEB is proposed. The mechanism of SEB in Ga2O3 MOSFET was revealed to be the result of a unique structure without a PN junction within it, which possesses gate control ability and exerts a significant influence on the conduction of the depletion region. [ABSTRACT FROM AUTHOR]

We have grown and characterized (110)-oriented YBa2Cu3O7−x (YBCO)/PrBa2(Cu0.8Ga0.2)3O7−x (PBCGO) bilayer and YBCO/PBCGO/YBCO trilayer heterostructures, which were deposited by pulsed laser deposition technique for the nanofabrication of (110)-oriented YBCO-based superconductor (S)/insulator (I)/superconductor (S) tunneling vertical geometry Josephson junction and other superconductor electronic devices. The structural properties of these heterostructures, investigated through various x-ray diffraction techniques (profile, x-ray reflectivity, pole figure, and reciprocal mapping), showed (110)-oriented epitaxial growth with a preferred c-axis-in-plane direction for all layers of the heterostructures. The atomic force microscopy measurement on the top surface of the heterostructures showed crack-free and pinhole-free, compact surface morphology with about a few nanometer root mean square roughness over the 5 × 5 μm2 region. The electrical resistivity measurements on the (110)-direction of the heterostructures showed superconducting critical temperature (Tc) values above 77 K and a very small proximity effect due to the interfacial contact of the superconducting YBCO layers with the PBCGO insulating layer. Raman spectroscopy measurements on the heterostructures showed the softening of the Ag-type Raman modes associated with the apical oxygen O(4) and O(2)-O(3)-in-phase vibrations compared to the stand-alone (110)-oriented PBCGO due to the residual stress and additional two Raman modes at ∼600 and ∼285 cm−1 frequencies due to the disorder at the Cu–O chain site of the PBCGO. The growth process and structural, electrical transport, and Raman spectroscopy characterization of (110)-oriented YBCO/PBCGO bilayer and YBCO/PBCGO/YBCO trilayer heterostructures are discussed in detail. [ABSTRACT FROM AUTHOR]

A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs. [ABSTRACT FROM AUTHOR]

Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources for the THz range but are complex to model. An efficient extended rate equation model is developed here by incorporating the resonant tunneling mechanism from the density matrix formalism, which permits to simulate THz QCLs with thick carrier injection barriers within the semi-classical formalism. A self-consistent solution is obtained by iteratively solving the Schrödinger–Poisson equation with this transport model. Carrier–light coupling is also included to simulate the current behavior arising from stimulated emission. As a quasi-ab initio model, intermediate parameters, such as pure dephasing time and optical linewidth, are dynamically calculated in the convergence process, and the only fitting parameters are the interface roughness correlation length and height. Good agreement has been achieved by comparing the simulation results of various designs with experiments, and other models such as density matrix Monte Carlo and non-equilibrium Green's function method that, unlike here, require important computational resources. The accuracy, compatibility, and computational efficiency of our model enable many application scenarios, such as design optimization and quantitative insights into THz QCLs. Finally, the source code of the model is also provided in the supplementary material of this article for readers to repeat the results presented here, investigate, and optimize new designs. [ABSTRACT FROM AUTHOR]

Ferroelectric materials are widely used in actuators, exciters, and memory devices due to their excellent electromechanical properties. However, the instinctive brittleness of ferroelectric materials makes them easy to fracture under external load. Since giant strain gradient can be easily generated near the crack tip, the flexoelectric effect is indispensable in the research of fracture properties of ferroelectric materials. With the combination of time-dependent Ginzburg–Landau theory and phase-field model, the electromechanical behavior of PbTiO 3 in the vicinity of the crack tip is determined in this work. The simulation results demonstrate that the domain structure near the crack tip becomes asymmetric with the flexoelectric effect. The polarization switching-induced toughening, which is characterized by the J -integral, depends on the direction of the crack relative to the original polarization orientation. Furthermore, the longitude flexoelectric coefficient f 11 has more significant impact on the fracture toughness than that of the transverse flexoelectric coefficient f 12 and the shear flexoelectric coefficient f 44. The results of the present work suggest that the flexoelectric effect must be considered in the reliable design of ferroelectric devices. [ABSTRACT FROM AUTHOR]

We report a two-layer Mueller matrix model of polarized light propagation through layered human skin. Our model is based on single scattering approximation and the fact that the main scatterers in the top layer are various types of cells and the scatterers beneath it consist of fibers. By modeling the first layer mainly with spherical particles inducing the characteristics represented by Mueller matrices of depolarization and diattenuation, the second layer mainly with cylindrical scatterers inducing the retardance caused by scattering and birefringence, and considering the effects of the first layer to the second one, and the equal weight of contributions from both layers to a scatterer, it is possible to separate polarization properties of the medium induced by light propagation and scattering processes. One advantage of our model is that its extension to multi-layer tissues is straightforward. Polarization effects of human nail fold are identified. [ABSTRACT FROM AUTHOR]

The rare earth alloy Y 2 Co 17 − x Ni x was prepared by a low-cost co-precipitation reduction-diffusion process, and its crystal structure, static magnetic properties, and microscopic morphology were systematically characterized. The effects of Ni doping with different contents on the electromagnetic parameters and wave absorption properties of Y 2 Co 17 − x Ni x /polyurethane(PU) compounds were researched in the frequency range of 0.1–18 GHz. The results show that the static magnetic properties and wave absorption properties change significantly with Ni doping, and the maximum reflection loss of Y 2 Co 14 Ni 3 /PU reaches − 89.7 dB at 2.9 mm thickness, and the maximum reflection loss peaks of Y 2 Co 17 /PU and Y 2 Co 16 Ni 1 /PU are at 1.316 and 1.515 GHz, which is at the center frequency of the L-band. With Ni doping, the effective absorption bandwidth of the compounds at a frequency above 3 GHz is greatly increased. The physical factor in the bandwidth calculation was modified, and the effective absorption bandwidth of the material was calculated theoretically, and the error was less than 5 % compared with the experimental value. [ABSTRACT FROM AUTHOR]

Dielectric energy storage capacitors offer great potential in pulsed power devices due to the high power density and fast charging-discharging rate. Designing a host material with high field-induced polarization is of importance for developing dielectric energy storage materials via further composition modulation. In this paper, we compare the microstructure, dielectric, and ferroelectric properties as well as the energy storage performance of samples K1/2Bi1/2TiO3(KBT), 75KBT-25BiFeO3 (KBTF25), and 88KBT-12Bi0.85Nd0.15FeO3 (KBNTF12) in detail. It is found that, among three samples, sample KBNTF12 possesses the most complex local structure coexisting of a four-distortions with different polarities; meanwhile, sample KBNTF12 behaves as a strong relaxor, thus giving a high field-induced polarization. Besides, sample KBNTF12 realizes the highest electric breakdown strength Eb among three samples, which is resorted to the highest resistivity of grain boundary. Highest ΔP and Eb of sample KBNTF12 among three samples render it achieve ultrahigh stored energy density Ws of 6.94 J/cm3, high recoverable energy density Wr of 5.23 J/cm3, and high efficiency η of 75.4%. Our work suggests that 88KBT-12BNF binary composition be an optimal candidate for dielectric energy storage ceramics. [ABSTRACT FROM AUTHOR]

We report on the application of solution-based p-type electrical doping using 12-molybdophosphoric acid hydrate (PMA) to the fabrication of organic tandem solar cells. Such a doping approach leads to a spatially confined vertical doping profile down to a limited depth from the surface of polymer films, thus allowing the hole-collecting component of the charge recombination stack to be embedded in the photoactive layer of the bottom sub-cell. This simplifies the device architecture by removing the need for an extra dedicated hole-collecting layer. It is shown that this novel charge recombination stack comprising a PMA-doped bottom photoactive layer and a trilayer of Ag/AZO/PEIE is compatible with a solution-processed top photoactive layer. The fabricated inverted organic tandem solar cells exhibit an open-circuit voltage that is close to the sum of the open-circuit voltages of the individual sub-cells, and a fill factor that is close to the better fill factor of the two sub-cells. [ABSTRACT FROM AUTHOR]

Surface magneto-plasmon (SMP) sensors have attracted continuous attention due to their field enhanced signal-to-noise ratios, sensitivities, and detection limits. Although many progresses have been achieved in the nanodots, nanorods, or nanodiscs, few studies have been conducted on films containing arrays of nanopores or nanoholes. SMP sensors based on arrays of nanopores could be much more promising for future ultrasensitive optical detectors since they can couple the SMP enhancement with Fabry–Pérot interference of nanopores for high-performance resonator sensors that can be further tuned under a magnetic field. We, thus, propose a high-performance SMP sensor based on the magneto-optical Kerr effect (MOKE) of films containing a square array of Au–Co double-layer nanopores on the Au film substrate or SMP-MOKE sensor. The local electric field around the magneto-plasmon arrays of nanopore photonic crystals can be greatly enhanced by applying an external magnetic field due to their magneto-optical activity and excitation of high-quality surface plasmon resonances. Multi-physics coupling simulations and validation by COMSOL on the structure-dependent optical properties suggest that the proposed SMP-MOKE sensor has a high sensitivity of 711 nm/Refractive Index Units (RIUs) and a figure of merit (FOM) of the order of 105 RIU−1, which is an order of magnitude greater than the best grating-type sensors, to the best of our knowledge. Our results shall facilitate the theoretical design for the future fabrication of ultra-sensitive sensors or resonators with excellent FOM and reliability for air-quality monitoring or chemical sensing, etc. [ABSTRACT FROM AUTHOR]

An atmospheric-pressure microwave plasma torch is employed to generate hydrogen by injecting methanol aerosols into the near afterglow region of a nitrogen microwave plasma. Two types of reaction chambers are proposed to study the influence of different boundary conditions of reaction chambers on hydrogen production by comparison. Fourier transformation infrared spectrometer and gas chromatography are used to measure and determine the hydrogen production rate, energy efficiency, and hydrogen yield. Also, the effects of conditions of methanol injection and discharge parameters on methanol decomposition are investigated, respectively. It is found that the active species originated from collision with the excited and ionized N2 in the high gas temperature in the plasma discharge plays an important role in the conversion of methanol to hydrogen. The gas flow pattern in the reaction chamber is closely related to boundary conditions and significantly affects the reaction time of methanol in it, which is analyzed with the software of computational fluid dynamics. The achievements of hydrogen production in our work are as follows: production rate up to 921 l/h, energy yield up to 371 l/kWh, and hydrogen yield up to 70%, respectively. Furthermore, the reaction mechanism is discussed in detail with respect to the formation of outlet products. [ABSTRACT FROM AUTHOR]

A hybrid structure composed of a grating coupled graphene structure and two one-dimensional photonic crystals (PhCs) is investigated, where the topological edge state (TES) and the graphene surface plasmon polariton (GSPP) are coupled to generate Fano resonances. The grating coupled graphene structure is used to excite the GSPP and provides a broad resonance. The two PhCs are designed to possess opposite topological properties; thus, the TES appears at the interface and exhibits a narrow resonance. The constructive and destructive interference between the GSPP and the TES results in the Fano resonance. By analyzing the resonant behaviors, it is found that the line shape of Fano resonance can be actively tuned by the graphene Fermi energy. We apply our results to the optical switching, a high-performance optical switch is achieved, and the modulation depth can reach as high as 23.31 dB. In addition, owing to the characteristic of Fano resonance with steep dispersion and asymmetric profile, our designs might offer an alternative strategy to achieve potential applications in sensors, filters, optical switches, and slow-light devices. [ABSTRACT FROM AUTHOR]

We investigated the effect of the sheath around the probe tips on the transmission spectrum of a cutoff probe using an electromagnetic simulation and a circuit model. Our results show that the width of the sheath can change the transmission spectrum, which can affect the absolute value of the electron density. In a real-world cutoff probe structure, this effect may become apparent in a low-density plasma or when a high bias voltage is applied to the plasma. The key factor is capacitance, which contains the sheath component. In the case of a low-density plasma, the change in the sheath capacitance of the sheath region contributes to the shift in the resonant frequency. For thick sheath widths, at least a 5% discrepancy can occur between the actual plasma frequency and the measurement owing to variations in the capacitance, particularly the sheath components surrounding the probe. We expect that this study will facilitate reduction in the measurement error and uncertainty in microwave cutoff probe measurements, particularly when applied to low-density plasma measurements. [ABSTRACT FROM AUTHOR]

The bond breaking of energetic materials under the action of temperature and pressure has always been a key step in understanding the explosive mechanism of energetic materials. In this work, we use the mean square shift of atoms and the theoretical bond breaking position of chemical bonds to give the bond breaking temperature of each chemical bond of insensitive high-energy energetic materials, 1,1-diamino-2,2-dinitroethylene (α-FOX-7) and 1,3,5-triamino-2,4,6-trinitrobenzene (TATB), at 0 and 30 GPa. The calculation results show that the bond breaking sequence of α-FOX-7 and TATB in the selected pressure range is N–H, N–O, C–NO2, and C–NH2. At the same time, the difference in the sensitivity between α-FOX-7 and TATB was discussed through the analysis of partial chemical bond breaking temperature. [ABSTRACT FROM AUTHOR]

A design method to extend the operating bandwidth of a low-frequency magnetic microwave absorber is presented. According to the mapped impedance distribution from the design objective, a synthesized reactive ground consisting of a triple-ring array, instead of the perfect electric conductor (PEC), is conveniently placed at the back of a commercially available magnetic sheet to realize impedance matching. Compared with the conventional PEC, the reactive ground extends the operating bandwidth of reflection coefficient being less than −10 dB by introducing four consecutive absorption peaks so that the optimized structure achieves broadband absorption from 2.3 to 4.3 GHz with a thickness of 0.027 times the free-space wavelength at the lowest operating frequency and a 60.6% fractional bandwidth which is nearly two times that of the conventional structure. The physical mechanism is further investigated through the distributions of current flow and power loss. Finally, a prototype is fabricated and measured. The good agreement between the simulated and measured results verifies the effectiveness of the presented design method. [ABSTRACT FROM AUTHOR]

A flat-cutoff sensor installed on the chamber wall or chuck allows precise measurement of the plasma density in real time, even with a wafer placed on the sensor. However, a few studies have been conducted on the measurement characteristics in an environment where a wafer containing a metal layer is placed on a sensor. In this study, we investigated the effect of wafers containing metal layers on flat-cutoff sensor measurements using circuit models and experiments. The metal layer in the wafer shifts the cutoff frequency up to four times higher, and the degree of shift depends on the plasma density. The relationship between the shift in the cutoff frequency and plasma density can be interpreted as the ratio of the plasma inductance to that of the metal layer from the circuit model of the flat-cutoff sensor. The calculation results were verified experimentally using wafers containing Al and Ti metal layers. As a result, measurement was found to be possible even when a wafer containing a metal layer was placed on a flat-cutoff sensor, and these results can improve the measurement accuracy of the flat-cutoff sensor for the real-time plasma measurement. [ABSTRACT FROM AUTHOR]

Graphene layers placed on SrTiO3 single-crystal substrates, i.e., templates for remote epitaxy of functional oxide membranes, were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements with non-confocal optics due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates. [ABSTRACT FROM AUTHOR]

Oxygen vacancy is crucial to the optical properties in In 2 O 3 , however, the single oxygen vacancy model fails to explain the observed multi-peak emission in the experiment. Herein, we have theoretically investigated the diversity of oxygen vacancy distribution, revealing the relationship between the defect configurations and the optical properties. Combining the first-principles calculations and bayesian regularized artificial neural networks, we demonstrate that the structural stability can be remarkably enhanced by multi-oxygen vacancy aggregation, which will evolve with the defect concentration and temperature. Notably, our results indicate that the single oxygen vacancy will induce the emission peaks centered at 1.35 eV, while multi-peak emission near 2.35 eV will be attributed to the distribution of aggregated double oxygen vacancies. Our findings provide a comprehensive understanding of multi-peak emission observed in In 2 O 3 , and the rules of the vacancy distribution may be extended for other metal oxides to modulate the optical properties in practice. [ABSTRACT FROM AUTHOR]

In this work, we investigated both spontaneous and stimulated whispering gallery mode (WGM) emissions of 2 mol. % Li+-doped ZnO (Li-ZnO) microspheres with different sizes under 325 and 488 nm wavelength laser excitations, respectively. It was found that all the microspheres exhibit stimulated emissions under a visible laser excitation source of 488 nm wavelength after the threshold pumping power. Thereafter, we studied the dependence of threshold pumping power on the size of microresonators to achieve stimulated emissions by individual microspheres. Furthermore, two microspheres (MS2 and MS3) are excited via a 325 nm UV laser, and surprisingly, the WGM peaks of higher intensity are observed in the visible rather than in the UV spectral region. We expected that most of the emissions are achieved via defect states transitions instead of inter-band transitions in the microresonators. It was found that WGMs in each microsphere exhibit a linear spectral shift of 3–5 nm with increasing pumping power of 488 nm excitation laser source. We believe that these proposed microspheres can be utilized effectively as WGM-based visible lasers and sensors. [ABSTRACT FROM AUTHOR]

Toxicity and instability of lead-based perovskite materials are two key issues for emerging inorganic perovskite solar cells. Therefore, the development of stable, lead-free inorganic perovskite materials has attracted great attention in the photovoltaic field. In this study, we report the effects of Ge-doped on the structural stability, mechanical, and optoelectronic properties of Cs2TeBr6 double perovskite by first-principles calculations. The results show that the Cs2Te1−xGexBr6 (x = 0, 0.25, 0.5, 0.75, and 1) doped system is structurally and mechanically stable, and the lattice constants decrease gradually with the increase of Ge4+ doping concentration. The Cs2TeBr6 undergoes a transition from brittleness to ductility after doping with Ge element, which is beneficial to the fabrication of flexible photovoltaic and optoelectronic devices. Especially, the perovskite derivative Cs2Te0.25Ge0.75Br6 has the highest ductility. Electronic structure calculations indicated that a transition from indirect to direct bandgap occurred when the Ge4+ doping concentration was increased from 0.25 to 0.5, which is beneficial to light absorption. According to the Shockley–Queisser limit, Cs2Te0.25Ge0.75Br6 is the best candidate for the solar cell absorber material due to the suitable bandgap (1.31 eV). Cs2Te0.75Ge0.25Br6 (1.46 eV) and Cs2Te0.5Ge0.5Br6 (1.23 eV) also show great potential as a solar cell absorber. Furthermore, an optical analysis revealed that the optical properties of the Cs2Te1−xGexBr6 doped system were improved with the doping of Ge4+ concentration. [ABSTRACT FROM AUTHOR]

The tetragonal fluoro-scheelite Li R E F 4 compounds (R E = rare earth) have been shown to exhibit a variety of useful optical and magnetic properties. While LiYF 4 has been widely studied, many of the fundamental thermodynamic properties of other members of this family remain unknown. Here, we report the complete elastic tensors ( C ij ) of single-crystalline LiYF 4 , LiTbF 4 , and LiGdF 4 using resonant ultrasound spectroscopy and density functional theory (DFT). We compare the results for LiYF 4 with prior experimental results using time-of-flight ultrasound methods. This is the first report, however, of the experimental elastic tensors of LiTbF 4 and LiGdF 4. The present results point to a softening of the elastic moduli of the Li R E F 4 system when Y is replaced by the larger ionic radius of Tb or Gd. Furthermore, we find that just 0.3% doping with Nd on the Y site also leads to a slight softening of the moduli. The variation of the elastic moduli as a function of temperature up to 216 ° C was also measured. A nearly linear softening of all seven independent elastic moduli was observed with increasing temperature. Phonon dispersions and phonon density of states obtained by DFT support the experimental finding of a significantly higher sound velocity due to lighter Y atoms in LiYF 4 , as compared to heavier LiTbF 4 and LiGdF 4. [ABSTRACT FROM AUTHOR]

We explored a Mg-alloyed ZnO material (or MgZnO alloy) on a lattice-matched scandium aluminum magnesium oxide substrate for obtaining most effective photodetectors with highest (∼10 A/W) and fastest (up to 3 GHz) responses and two orders of magnitude UV/VIS rejection ratio. Device operation was related to its material electronic properties (carrier lifetime, diffusivity, and diffusion length) via photoluminescence and light-induced pump–probe techniques. Defect-related response is found suitable for sensitive logarithmic detectors, while exciton-related response is favorable to ultrafast linear UV solar blind detectors. Two-contact planar detector design allows their application in low-cost environmental detection systems. [ABSTRACT FROM AUTHOR]

β-Ga2O3 based solar-blind photodetectors have strong radiation hardness and great potential applications in Earth's space environment due to the large bandgap and high bond energy. In this work, we investigated the photoelectric properties influence of β-Ga2O3 photodetector irradiated by 100 MeV high-energy protons which are the primary components in the inner belt of the Van Allen radiation belts where solar-blind photodetectors mainly worked. After proton irradiation, due to the formation of more oxygen vacancies and their migration driven by bias at the metal/semiconductor interface, transportation of carriers transforms with electron tunneling conduction for low-resistance state and thermionic emission for high resistance state. As a result, the current–voltage curves of β-Ga2O3 solar-blind photodetectors exhibit apparent hysteresis loops. The photoresponsivity of β-Ga2O3 photodetectors slightly increases from 1.2 × 103 to 1.4 × 103 A/W after irradiation, and the photoresponse speed becomes faster at a negative voltage while slower at positive voltage. The results reveal the effects of high-energy proton irradiation on β-Ga2O3 solar-blind photodetectors and provide a basis for the study of their use in a radiation harsh environment. [ABSTRACT FROM AUTHOR]

Recently, cubic boron arsenide (c-BAs) has attracted global attention due to its higher lattice thermal conductivity (κ L), which is comparable to diamond, and excellent thermal properties. Can c-BAs achieve the leap in κ L after transforming its structure from three-dimensional (3D) to two-dimensional (2D) like diamond to graphene? Previous studies have only investigated the κ L considering three-phonon scattering and isotope scattering, and the calculated results are diverse. In this study, we first calculate second-order interatomic force constants (IFCs) and third-order IFCs to iteratively solve the Boltzmann transport equation (BTE) and to obtain the κ L 3 of monolayer hexagonal BX (X = P, As, Sb), h-BX (X = P, As, Sb), considering only three-phonon and isotope scattering. The corresponding κ L 3 of h-BX are 278.2, 205.7, and 20.2 W/mK at room temperature, and we explain the monotonous change that κ L 3 decreases with the increase of average atomic mass (mavg) different from previous studies. Subsequently we use regular residual analysis (RRA) to determine the necessity of including four-phonon scattering when calculating the κ L of monolayer h-BX. By calculating the fourth-order IFCs, we obtain the κ L 3 + 4 of monolayer h-BX including four-phonon scattering. The values of κ L 3 + 4 at room temperature are 61.12, 37.99, and 5.73 W/mK, which are highly consistent with the κ L ∞ of monolayer h-BX as predicted by the phonon spectral energy density (SED) method. The phonon SED method considers all-order scattering and gives values of 54.05 ± 21.48 W/mK (h-BP), 18.20 ± 4.47 W/mK (h-BAs), and 2.46 ± 0.34 W/mK (h-BSb), respectively. Our results show that the influence of four-phonon scattering on the κ L of monolayer h-BX is significant, and the κ L 3 + 4 and κ L ∞ still undergo monotonic changes after including four-phonon scattering. The main factors that determine the low (ultra-low) κ L of monolayer h-BAs (h-BSb) are large mavg and weaker bonding strength, the existence of intermediate frequency ZO and scattered acoustic branches, the strong anharmonicity caused by the in-plane vibrations of As (Sb) atoms, and four-phonon scattering. This study aims to end the variance within monolayer h-BAs κ L numerical simulation and demonstrate the potential of monolayer h-BSb in thermoelectric field applications. [ABSTRACT FROM AUTHOR]

A simple equivalent circuit model (ECM) for a reflective polarization converter (RPC) comprising anisotropic metasurfaces is presented in this paper. The impedance matrix of an anisotropic metasurface in x and y axis is derived by the impedance matrix in a diagonal axis multiply with a rotated matrix, while the diagonal impedance matrix can be calculated by a simple L C network, which contains a series of capacitors and inductors. The presence of the dielectric substrates is considered using the transmission line theory. Some typical RPCs with different metasurface shapes are used to verify the effectiveness of the ECM. The methodology provides a simple approach for the design and optimization of RPC. Finally, we designed a polarization converter based on the proposed method, and the measured results are in good agreement with the theoretical results. [ABSTRACT FROM AUTHOR]

In this work, in order to develop new Fe-based amorphous alloys with room-temperature magnetocaloric effect and good magnetocaloric performance, high iron content Fe-based amorphous alloys were designed, and their Curie temperatures were adjusted to room temperature through the addition of Mo. As a result, a new Fe83Mo6Si1B7P2C1 amorphous alloy with room-temperature magnetocaloric effect was successfully prepared by melt-spinning technique, and it has the Curie temperature of 300 K, the maximum isothermal magnetic entropy change of 2.74 J kg−1 K−1 and the refrigerant capacity of 485.2 J kg−1 under an applied magnetic field of 5 T. Combining with the advantages of excellent magnetocaloric properties, negligible hysteresis loss, and low material cost, the present Fe83Mo6Si1B7P2C1 amorphous alloy should be a promising candidate as room-temperature magnetic refrigerants. [ABSTRACT FROM AUTHOR]

Two-dimensional van der Waals ferroelectric semiconductors have attracted extensive research interest in both theoretical investigation and device applications due to their ferroelectricity and semiconducting nature. However, it is still not well understood how the ferroelectric phase is able to coexist with the semiconducting phase in this emerging material class. In this work, mm-scale continuous films of In2Se3 with a thickness of ∼3 nm were synthesized successfully by physical vapor deposition. Furthermore, we fabricated asymmetric ferroelectric semiconductor junctions (a-FSJs) from thick exfoliated and PVD-grown ultrathin In2Se3 films. A high read current density of ∼100 A/cm2 and a distinction ratio of over 102 at VRead = 0.5 V are achieved in devices fabricated by a 3 nm-thick In2Se3 film toward ultrahigh-density memory integration. Notably, the coercive voltage is constant, with In2Se3 film thickness decreasing from 200 to 3 nm. A qualitative model is proposed to elucidate the anomalous film-thickness-independent coercive voltage in this ultrathin a-FSJ, which can also be generalized to other emerging two-dimensional ferroelectric semiconductors. [ABSTRACT FROM AUTHOR]

Organic solar cells (OSCs) have received considerable attention as a promising clean energy-generating technology because of their low cost and great potential for large-scale commercial manufacturing. With significant advances in new charge-transport material design, interfacial engineering, and their operating conditions, power conversion efficiencies of OSCs have continued to increase. However, a fundamental understanding of charge carrier transport and especially how ionic moieties affect carrier transport is still lacking in OSCs. In this regard, photoelectron spectroscopy has provided valuable information about interfacial electronic structures. The interfacial electronic structure of OSC interlayers greatly impacts charge extraction and recombination, controls energy level alignment, guides active layer morphology, improves material's compatibility, and plays a critical role in the resulting power conversion efficiency of OSCs. Interfacial engineering incorporating inorganic, organic, and hybrid materials can effectively enhance the performance of organic photovoltaic devices by reducing energy barriers for charge transport and injection while improving compatibility between metal oxides and donor–acceptor based active layers or transparent conducting electrodes. This article provides a review of recent developments in interfacial engineering underlying organic photovoltaic devices of donor–acceptor interfaces. [ABSTRACT FROM AUTHOR]