Search

The synthesis of hydrogen-free carbon films with a sp(sup 3) content of ~30% is examined by using ion bombardment concurrent with carbon evaporation. The use of more energetic ion increases the damage and resputtering of the film, producing a sharp reduction of the sp(sup 3) content.

The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H+ beam by utilizing the 11B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C. [ABSTRACT FROM AUTHOR]

Silicon-on-insulator circuits have been considered less sensitive to single event effects than devices made using bulk technology. However, model experiments have indicated that charge collection occurs not only from the active layer above the buried oxide (BOX) but also from the substrate below the BOX, contrary to the earlier belief. In this paper we will present an analytical model based on the Gunn theorem to describe ion induced charge collection in metal-oxide-semiconductor devices. [ABSTRACT FROM AUTHOR]

Transmission electron microscopy has been used to image the tracks of high-energy 197Au+26 (374 MeV) and 127I+18 (241 MeV) ions incident in a nonchanneling direction through a prethinned specimen of hexagonal α-quartz (SiO2). These ions have high electronic stopping powers in quartz, 24 and 19 keV/nm, respectively, which are sufficient to produce a disordered latent track. When the tracks are imaged with diffraction contrast using several different reciprocal lattice vectors, they exhibit a radial strain extending outward from their disordered centerline approximately 16 nm into the crystalline surroundings. The images are consistent with a radial strain field with cylindrical symmetry around the amorphous track, like that found in models developed to account for the lateral expansion of amorphous SiO2 films produced by irradiation with high-energy ions. These findings provide an experimental basis for increased confidence in such modeling. [ABSTRACT FROM AUTHOR]

Examines silicon-on-insulator (SOI) layers produced by the processes of oxygen implantation into single-crystal silicon substrates, zone melt recrystallization of deposited polysilicon films and silicon epitaxy technique on sapphire substrates. Discussion on the x-ray diffractometer incorporating a position-sensitive detector; Information on the SOI film preparation and crystallography; X-ray characterizations.

Focuses on the effects of beryllium implantation and controlled-atmosphere annealing on the structure of gallium (arsenic phosphide)/gallium phosphide strained-layer superlattices (SLS). Use of cantilever-beam bending measurements; Optical and transport properties of the implanted and annealed SLS; Ion damage characterization of the implantation-induced stresses.

Presents information on a study that presented and interpreted the conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion-beam induced charge microscopy. Topographical contrast for different ions; Results and discussion on the study; Conclusions.