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In this paper, we study the elastic properties of the entropy-stabilized oxide (Mg, Co, Ni, Cu, Zn)O using experimental and first principles techniques. Our measurements of the indentation modulus on grains with a wide range of crystallographic orientations of the entropy-stabilized oxide revealed a high degree of elastic isotropy at ambient conditions. First principles calculations predict mild elastic anisotropy for the paramagnetic structure, which decreases when the system is considered to be non-magnetic. When the antiferromagnetic state of CoO, CuO, and NiO is accounted for in the calculations, a slight increase in elastic anisotropy is observed, suggesting a coupling between magnetic ordering and the orientation dependent elastic properties. Furthermore, an examination of the local structure reveals that the isotropy is favored through local ionic distortions of Cu and Zn—due to their tendencies to form tenorite and wurtzite phases. The relationships between the elastic properties of the multicomponent oxide and those of its constituent binary oxides are reviewed. These insights open up new avenues for controlling isotropy for technological applications through tuning composition and structure in the entropy-stabilized oxide or the high-entropy compounds in general.

The internal friction and creep deformation behavior of La0.8Ca0.2CoO3 and pure LaCoO3 mixed ionic electronic conducting perovskite ceramics have been studied by Dynamic Mechanical Analysis and uniaxial compression under constant applied load, respectively. It was found that both the internal friction and creep strain were almost an order of magnitude higher for Ca2+ doped LaCoO3 as compared to pure undoped LaCoO3. The difference in Ca2+ doped LaCoO3 behavior was attributed to the much higher concentration of point defects (e.g., oxygen vacancies) in the structure and their interaction with other mobile defects, such as ferroelastic domain/twin walls, stacking faults, dislocations, etc. Such interactions of numerous point defects with domain walls produce energetic barriers and slow down the movement of ferroelastic domain walls under applied stress. At the same time, the defects' interactions increase the internal friction resulting in a much higher creep strain of La0.8Ca0.2CoO3 as compared to pure LaCoO3, as the creep strain is determined by the distance between the domain wall and its equilibrium position at the onset of the creep process. Therefore, the high friction will result in the larger distance the wall has to move to reach the equilibrium which in turn results in higher creep strain. The expansion of LaCoO3 under constant applied compressive stress, named here as negative creep, was also discovered to occur during room temperature creep experiments.The internal friction and creep deformation behavior of La0.8Ca0.2CoO3 and pure LaCoO3 mixed ionic electronic conducting perovskite ceramics have been studied by Dynamic Mechanical Analysis and uniaxial compression under constant applied load, respectively. It was found that both the internal friction and creep strain were almost an order of magnitude higher for Ca2+ doped LaCoO3 as compared to pure undoped LaCoO3. The difference in Ca2+ doped LaCoO3 behavior was attributed to the much higher concentration of point defects (e.g., oxygen vacancies) in the structure and their interaction with other mobile defects, such as ferroelastic domain/twin walls, stacking faults, dislocations, etc. Such interactions of numerous point defects with domain walls produce energetic barriers and slow down the movement of ferroelastic domain walls under applied stress. At the same time, the defects' interactions increase the internal friction resulting in a much higher creep strain of La0.8Ca0.2CoO3 as compared to pure LaCo...

The heat capacity of natural (Cu12−x (Fe, Zn, Ag)x(Sb, As)4S13) and synthetic (Cu12−xZnxSb4S13 with x = 0, 1, 2) tetrahedrite compounds was measured between 2 K and 380 K. It was found that the temperature dependence of the heat capacity can be described using a Debye term and three Einstein oscillators with characteristic temperatures that correspond to energies of ∼1.0 meV, ∼2.8 meV, and ∼8.4 meV. The existence of localized vibrational modes, which are assigned to the displacements of the trigonally coordinated Cu atoms in the structure, is discussed in the context of anharmonicity and its effect on the low lattice thermal conductivity exhibited by these compounds.

We report on the influence of boron segregation on the thermoelectric properties of CoSi. Contrary to previous suggestions, and in stark contrast to aluminum substitution, boron does not enter the lattice on the Si site, but rather segregates to the grain boundaries in these alloys. Through a combination of x-ray diffraction, scanning electron microscope, and scanning Auger techniques, we present clear evidence of the formation of a CoB phase at the grain boundaries. Consistent with the failure of B to substitute for Si, we observe no changes in the electron concentration or the Seebeck coefficient under boron substitution. The electrical resistivity, on the other hand, displays a non-monotonic behavior with increasing boron concentration, first decreasing for small amounts of boron, before increasing at higher levels of substitution. We attribute this behavior to a combination of an initial healing effect of boron on microcracks, followed by the eventual increase in electron scattering by the secondary CoB phase at higher concentrations.

The compositional dependence of the crystal structure and lattice thermal conductivity in the Cu3SbSe4-Cu3SbS4 system has been studied. The lattice parameters of the Cu3SbSe4-xSx compounds decrease linearly with x, and the tetragonal structure (space group 14−2m no. 121) of the end compounds is maintained at all compositions. The lattice thermal conductivity is much lower than that predicted by a simple rule of mixtures, which is typical for a solid solution. The Debye model produces a very reasonable fit to the experimental lattice thermal conductivity data when phonon scattering due to atomic mass and size differences between Se and S is taken into account. Compounds in this series are likely to improve upon the thermoelectric performance of Cu3SbSe4, which has shown ZT = 0.72 when optimized.