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Phase-change memory (PCM) is an emerging non-volatile memory technology that is based on the reversible and rapid phase transition between the amorphous and crystalline phases of certain phase-change materials. The ability to alter the conductance levels in a controllable way makes PCM devices particularly well-suited for synaptic realizations in neuromorphic computing. A key attribute that enables this application is the progressive crystallization of the phase-change material and subsequent increase in device conductance by the successive application of appropriate electrical pulses. There is significant inter- and intra-device randomness associated with this cumulative conductance evolution, and it is essential to develop a statistical model to capture this. PCM also exhibits a temporal evolution of the conductance values (drift), which could also influence applications in neuromorphic computing. In this paper, we have developed a statistical model that describes both the cumulative conductance evolution and conductance drift. This model is based on extensive characterization work on 10 000 memory devices. Finally, the model is used to simulate the supervised training of both spiking and non-spiking artificial neuronal networks. [ABSTRACT FROM AUTHOR]

There is a significant need to build efficient non-von Neumann computing systems for highly data-centric artificial intelligence related applications. Brain-inspired computing is one such approach that shows significant promise. Memory is expected to play a key role in this form of computing and, in particular, phase-change memory (PCM), arguably the most advanced emerging non-volatile memory technology. Given a lack of comprehensive understanding of the working principles of the brain, brain-inspired computing is likely to be realized in multiple levels of inspiration. In the first level of inspiration, the idea would be to build computing units where memory and processing co-exist in some form. Computational memory is an example where the physical attributes and the state dynamics of memory devices are exploited to perform certain computational tasks in the memory itself with very high areal and energy efficiency. In a second level of brain-inspired computing using PCM devices, one could design a co-processor comprising multiple cross-bar arrays of PCM devices to accelerate the training of deep neural networks. PCM technology could also play a key role in the space of specialized computing substrates for spiking neural networks, and this can be viewed as the third level of brain-inspired computing using these devices. [ABSTRACT FROM AUTHOR]

In phase-change memory (PCM), low-field electrical resistance is typically used to quantify the programmed cell state. However, this metric has several disadvantages. First, it exhibits temporal drift, which is a significant challenge for realizing multilevel PCM. Moreover, because of cell-geometry effects, this metric saturates after a certain point and thus masks the fact that the amorphous size increases with increasing input power. Finally, the resistance is typically measured as the current for a fixed bias voltage, which adversely affects the signal-to-noise ratio at high resistance values. A new metric for the programmed state in a PCM cell is proposed that has significant advantages over the resistance metric in all these aspects and is more representative of the fundamental programmed entity, which is the amorphous/crystalline phase configuration in the PCM cell. Analytical and experimental results are presented that demonstrate the efficacy of the proposed metric. [ABSTRACT FROM AUTHOR]