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The incorporation of Si delta-doped planes into GaAs grown by molecular beam epitaxy was investigated using secondary ion mass spectrometry, local vibrational mode infrared absorption and electrical characterization. The results showed that the density of Si(sub Ga) donors, the free electron concentration and the total Si coverage were associated with each other. However, when the Si coverage was greater than 10(super 13) cm(super -2), electron density decreased while the Si(sub Ga) remained constant.

Presents information on a study which described infrared absorption and Raman scattering measurements of the localized vibration modes due to defects incorporating silicon impurities in p-type silicon-doped gallium arsenide grown by liquid phase epitaxy on (001) planes. Material compensated during growth; Discussion of p-type material compensated by 2 megaelectronvolt electron irradiation; Raman spectra of molecular beam epitaxy p-type samples.

Presents a study which assessed surface segregation of indium in gallium arsenide (GaAs) during molecular beam epitaxial growth of InAs monolayers between GaAs layers using photoluminescence (PL), secondary-ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy measurements. Details of an experiment on GaAs semi-insulating substrates; Description of the PL peaks relating to the InAs layers; Result of SIMS in surface segregation.

Presents a study that reported on the reflection high-energy electron diffraction, photoluminescence excitation study of the direct growth by molecular-beam epitaxy of one and two monolayers of indium arsenide and gallium arsenide. Details of the experiment; Results and discussion; Conclusion.

Presents a study that examined the transition from dilute aluminum structures to an aluminum arsenide monolayer in gallium arsenide (GaAs) and a comparison with silicon doping. Properties of silicon-doped superlattice stacks in GaAs grown by molecular beam epitaxy; Characteristics of the structures examined; Examination of an infrared localized vibration mode absorption line.

Focuses on the vibrational modes of silicon acceptors in p-type GaAs grown by molecular beam epitaxy on a (111)A plane. Details of the distribution of impurities between gallium and arsenic; Effect of silicon doping during molecular beam epitaxy growth on other GaAs planes; Factors that influence the shape of a Fano profile.