1. Influence of channel material properties on performance of nanowire transistors.
- Author
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Razavi, Pedram, Fagas, Giorgos, Ferain, Isabelle, Yu, Ran, Das, Samaresh, and Colinge, Jean-Pierre
- Subjects
NANOWIRES ,TRANSISTORS ,QUANTUM theory ,BALLISTIC electrons ,FIELD-effect transistors ,GERMANIUM ,SILICON - Abstract
The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher Ion/Ioff ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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