Search

Piezoresponse force microscopy (PFM) has been widely used for the nanoscale analysis of piezoelectric properties and ferroelectric domains. Although PFM is useful because of its simple and nondestructive features, PFM measurements can be obscured by non-piezoelectric effects that could affect the PFM signals or lead to ferroelectric-like behaviors in non-ferroelectric materials. Many research studies have addressed related technical issues, but they have primarily focused on vertical PFM. Here, we investigate significant discrepancies in lateral PFM signals between the trace and the retrace scans, which are proportional to the scan angle and the cantilever lateral tilting discrepancy. The discrepancies in PFM signals are analyzed based on intrinsic and extrinsic components, including out-of-plane piezoresponse, electrostatic force, and other factors. Our research will contribute to the accurate PFM measurements for the visualization of ferroelectric in-plane polarization distributions. [ABSTRACT FROM AUTHOR]

Hydroxyapatite (HAp), a main constituent of the cortical bone, retains a large surface charge that plays a critical role in the regeneration of bones, whose source remains an enigma. Here, we used multi-eigenmode piezoresponse force microscopy via Pearson correlation and conducted multiscale material analysis to independently measure the piezoelectric coefficient and the surface charge density of HAp. Quantitative comparison was conducted between the measured surface charge density and the conceptual values computed for all possible candidates of the surface charging such as piezoelectricity, chemically induced surface charging, flexoelectricity, and defect dipole moment. The results presented Ca2+ ions released during local calcium orthophosphate phase transition at the surface as the main source of the surface charging. Further analysis showed that the ion concentration was modulable using a charged conductive tip, implying that the interstitial ions are mobile within the HAp matrix. In this work, we developed a novel method to measure the effective surface charge density of arbitrary material systems, thereby facilitating the investigation of biophysical phenomena related to surface electromechanics. Most importantly, the research promotes a new understanding of the origin of osteoconduction observed in past works conducted on HAp. [ABSTRACT FROM AUTHOR]

Piezoresponse force microscopy (PFM) uses a cantilever arm to track the electromechanical motion of the electric dipole moment to visualize the ferroelectric domain structure, which provides an important insight into the physics of switchable electric polarization—especially for memory devices and integrated microelectronics. Here, I provide a tutorial on single frequency vertical PFM, the most basic mode of PFM. I will start with the basic components of atomic force microscopy (AFM), including tip, cantilever, X–Y stage, Z actuator, and lock-in amplifier. Contact mode AFM will be briefly explained and discussed, where you can find two modes: constant deflection and constant height modes. Single-frequency vertical PFM splits the frequency domain of tip vibration into low and high frequencies and uses a low-pass filter to nullify any motion caused by topography (constant deflection). In contrast, the lock-in amplifier will pinpoint the vibration induced by the vertical piezoelectric strain along the sample's surface normal (constant height). This tutorial will provide an overall and detailed step by step instruction to conduct PFM imaging and piezoresponse hysteresis loop measurement using atomic force microscopy and a lock-in amplifier and teach how to interpret the PFM images and the piezoresponse hysteresis loops for various applications. [ABSTRACT FROM AUTHOR]

A study on polarization switching processes in ferroelectric thin films investigated polarization switching as a function of stepwise increasing dc bias voltage using atomic force microscopy in tandem with a lock-in amplifier. It was found that there exist preferential sites for each polarization direction. The damping of piezoelectric response occurred at the point of domain reversal. The forward and sideways domain growth models were used to interpret the results.

Multiferroic nanocomposites, consisting of branched, ferrimagnetic CoFe2O4 filaments and large protruding PbTiO3 particles embedded in a piezoelectric PbTiO3 matrix, have been fabricated by co-deposition using metalorganic chemical vapor deposition. Branched CoFe2O4 filaments reduce the CoFe2O4/PbTiO3 interfacial strain and induce a perpendicular magnetic anisotropy. Three-dimensional characterizations reveal that in addition to the c-domain, grains with a second orientation in PbTiO3 particles contribute to an additional four apparent variants of polarization. In contrast, the PbTiO3 matrix exhibits only c-domain polarization with a smaller magnitude. The smaller piezoresponse results from the constraints imposed by the branched CoFe2O4 filaments. Three-dimensional microstructure and property analysis provide a comprehensive insight on the structure-property relationship of multiferroic nanocomposites grown by metalorganic chemical vapor deposition. [ABSTRACT FROM AUTHOR]

A 17 nm thick PbTiO3 (PTO) films were fabricated via PbO gas phase reaction with TiO2 starting layer in a sputtering chamber. The influence of deposition temperature of TiO2 on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO2 deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property. [ABSTRACT FROM AUTHOR]

We have studied the effect of local surface potential distribution on its relaxation in the polycrystalline ferroelectric thin films. A lower surface potential region, i.e., potential pit, is generated near a grain boundary. The deep potential pit has a faster relaxation than the area far away from the potential pit due to the acceleration of the screen charge draining near the grain boundary and the domains formed by applying higher voltage have a faster relaxation due to the larger gradient of screen charge distribution. In addition, the surface potential and its relaxation depend on the sign of applying voltage. The result shows that the surface potential distribution may influence significantly to the reliability of bit signal on the memory devices. [ABSTRACT FROM AUTHOR]

We report the dependence of the ferroelectric domain configuration and switching behavior on the shape (square versus round) of epitaxial BiFeO3 (BFO) nanostructures. We fabricated (001) oriented BFO(120 nm)/SrRuO3(SRO,125 nm) film layers on (001) SrTiO3 single crystals by rf magnetron sputter deposition, and patterned them to square (500×500 nm2) and round (502 nm in diameter) shaped nanostructures by focused ion-beam lithography. The surface morphology and the crystalline structure of the nanostructures were characterized by scanning electron microscopy and x-ray diffraction, respectively, while the domain configuration was investigated using piezoelectric force microscopy. We found that the square-shaped nanostructures exhibit a single variant domain configuration aligned along the [111] direction, whereas the round-shaped nanostructures exhibit seven variants of domain configuration along the [111], [111], [111], [111], [111], [111], and [111] directions. Moreover, local d33 piezoelectric coefficient measurements showed hysteresis loops with a strong displacement in the voltage axis (strong imprint) for the square-shaped nanostructures, while the round-shaped ones exhibited more symmetric loops. These findings have critical implications for the development of nanocapacitors for gigabyte to terabyte nonvolatile ferroelectric memories. [ABSTRACT FROM AUTHOR]

An analysis of the current-voltage (I-V) characteristics of bridge-type Josephson junction of YBa2Cu3O(7-x) superconductor thin films microwave-irradiated at 77 K indicates that an enhancement of intensity of irradiation reduces current density and leads to constant voltage steps in the I-V curves. The constant voltage steps are not wide, due to a low value of normalized frequency. Subharmonic steps are not visible in the I-V characteristics of these thin films.

Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3] (PZT) thin films were fabricated on Pt( 111)/TiO[sub x]/SiO[sub 2]/Si substrates at 375°C by radio frequency magnetron sputtering. A mixture of (110) and (100) orientations was found in all the PZT thin films. However, the in-plane grain size increased with an increase in film thickness, all films had smooth surfaces, and the root mean square roughness of the PZT films was in the range of 1-1.5 nm. As the film thickness increased, a decrease in residual stress and volume density of the PZT films was observed. PZT films become poorly crystallized with a decrease in film thickness. The magnitude of the maximum displacement from atomic force microscopy in local piezoresponse hysteresis mode increased from 187.25 ± 9.363 in 40 nm to 418.5 ± 20.925 in 152 nm. We suggest that the degradation in piezoelectric properties with a decrease in film thickness resulted from degradation of the crystallinity observed using transmission electron microscopy analysis, size effects derived from the grain size, and the residual stress evaluated using a laser reflectance method. [ABSTRACT FROM AUTHOR]

The contrast mechanisms of domain imaging experiments assisted by atomic force microscope (AFM) have been investigated by model experiments on nonpiezoelectric (silicon oxide) and piezoelectric [Pb(Zr,Ti)O[sub 3]] thin films. The first step was to identify the electrostatic charge effects between the tip, the cantilever, and the sample surface. The second step was to explore the tip-sample piezoelectric force interaction. The static deflection of the cantilever was measured as a function of dc bias voltage (V[sub dc]) applied to the bottom electrode (n-type Si wafers) for noncontact and contact modes. In addition, a small ac voltage (V[sub ac] sin ωt) was applied to the tip to measure the amplitude (A[sub ω]) and phase (Φ[sub ω]) of the first harmonic (ω) signal as a function of V[sub dc]. By changing from the noncontact to the contact mode, a repulsive contribution to the static deflection was found in addition to the attractive one and a 180° phase shift in Φ[sub ω] was observed. These results imply that in the contact mode the cantilever buckling is induced by the capacitive force between the cantilever and the sample surface. This interaction adds to the tip-sample piezoelectric interaction thereby overlapping the obtained tip vibration signal. Therefore, the antiparallel ferroelectric domain images obtained at zero dc bias voltage will show a variation in A[sub ω] but a negligible one in Φ[sub ω]. The capacitive force contribution to the tip vibration signal was further verified in piezoelectric hysteresis loop measurement assisted by the AFM. The observed vertical offset of the loops was explained by the contact potential difference between the cantilever and the bottom electrode. The shape of the curve could be explained by the capacitive force interaction combined with the tip-sample piezoelectric interaction. The experimental results obtained in this study support the interpretation of the ... [ABSTRACT FROM AUTHOR]

Ultrathin smooth Pb(Zr, Ti)O(sub 3) (PZT) films are fabricated using a radio frequency (rf) magnetron sputtering method and their ferroelectric properties are investigated using an atomic force microscopic (AFM) based domain imaging technique and local piezoelectric hysteresis measurements. The relationship between film thickness and the ferroelectric properties of PZT thin films is discussed using carefully investigated microstructures of the films.