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A 43° rotated Y-cut LiNbO3 (LN) single-crystal thin film coated with a bottom electrode and a Mo/Ti Bragg reflector is successfully transferred onto the 4-in. LN wafer substrate by means of crystal-ion-slicing (CIS) technique and benzocyclobutene bonding method. The multilayer film is crack-free, and the Mo/Ti reflector shows good acoustic reflection efficiency. A thin film bulk acoustic wave resonator based on the Mo/Ti Bragg reflector and the LN thin film (LN-BAW) is prepared, and the properties are further analyzed. The results indicate that the LN-BAW provides a large Kt2 of ∼16.63% and the Q-factor and figure-of-merit of the LN-BAW reach 183 and 30.4, respectively.

In this study, Zr0.5Hf0.5O2 films were fabricated on Si substrate and were annealed at different temperatures by rapid thermal annealing (RTA) process. The charge trapping memory devices based on Zr0.5Hf0.5O2/SiO2/Si simple structure were investigated in detail. The memory device annealing at 690 °C shows the best property with a memory window of 5.6 V under ±12 V sweeping voltages in its capacitance-voltage curve and a better retention property. The high resolved transmission electron microscopy shows the generated SiO2 working as tunneling layer after RTA process, whose thickness increases with the rise of temperature. Combined with the TEM results, the photoluminescence spectrum and in situ angle resolved photoemission spectroscopy results further verify that oxygen vacancies and inter-diffusion layer also play a crucial role in charge trapping performance. This work provides direct insights for the charge trapping mechanisms based on high-k Zr0.5Hf0.5O2 films devices.

The admittance spectroscopy technique has been applied to characterize deep traps in molecular‐beam‐epitaxial‐grown n‐GaAs1−xSbx/N‐GaAs heterostructures. A single dominant defect has been identified in each of the three samples containing different Sb content. It was found that the substrate misorientation appears to affect the formation of the dominant defect, resulting in different defects in samples grown under the same conditions. It shows a good agreement when comparing the admittance spectroscopy results with those of the previously reported work of deep‐level transient spectroscopy.

Measurements of the major hysteresis loop and of the temperature dependence of the field cooled and zero field cooled moment in applied fields less than the coercive field have been performed on two ferromagnetic perovskites La0.95Mg0.05MnO3 and La0.5Sr0.5CoO3. The data have been analyzed within the framework of a generalized Preisach model which includes thermal fluctuations, critical effects, and a temperature dependent distribution of free energy barriers. The analysis shows that the response functions of the manganese perovskite are dominated by the growth of the anisotropy barriers, while in the cobalt perovskite, thermal fluctuations and barrier growth play a roughly equal role.

A resistance deep level transient spectroscopy (DLTS) model is presented which shows how the surface electron traps in GaAs metal‐semiconductor field‐effect transistors may result in the extensively reported signals attributed to hole trapping at the channel and substrate interface. By considering the detailed electron capture and emission processes of the surface states, the following have been successfully explained for the strong dependence of the surface state DLTS peak height on the device geometry and temperature: (i) the device geometry dependence of DLTS peak height is found to result from the fact that the amount of surface states involved in electron capture and emission in a DLTS study is proportional to the dimension of the ungated region; (ii) the drastic decrease of surface state DLTS peak height with decreased temperature is shown to be a direct result of the strong temperature dependence of the surface leakage current; and (iii) it is shown that the ‘‘holelike’’ DLTS signals can be used di...

We present our recent study of non-thermal excitation and coherent control of spin reorientation in 10-nm epitaxially grown Fe thin films by low-energy femtosecond laser pulses. The magnetization dynamics and hysteresis curves were recorded by pump-probe differential magnetic Kerr (DMK) spectroscopy using linearly polarized laser beams. A sharp switching in DMK signal is observed when we rotated the pump polarization. This result indicates a non-thermal origin of magnetization excitation and reorientation in Fe films. We reveal that spins can interact coherently with the polarization induced by the pulsed laser field in magnetic metals. Such opto-magnetic interactions are instantaneous and are only limited in time by the properties of laser pulses. Our results suggest the feasibility of ultrafast optical control of both the magnetization and the demagnetization responses in magnetic films.

Polycrystalline Fe0.4Mn0.6 layers with the different thickness are deposited on 4-nm-thick single-crystalline Co2FeAl layers, which are grown on GaAs (001) substrates at room temperature by molecular-beam epitaxy. Both the exchange bias and the in-plane magnetic anisotropies of the bilayers are strongly dependent on the thickness of the Fe0.4Mn0.6 layer. The former is described using a granular level model. A modified Stoner-Wohlfarth model is used to explain the in-plane magnetic anisotropies observed at 5 K, while one possible reason for the magnetic anisotropies measured at 300 K is the complex interfacial magnetic properties proved by x-ray magnetic circular dichroism measurements.

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar