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We have investigated the structural and electrical properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure that incorporates a MgO/SiO2 insulating buffer between a ferroelectric layer and Si substrate. Highly oriented lead–zirconate–titanate [Pb(Zr,Ti)O3, or PZT] films were grown on the MgO-buffered oxidized silicon substrates with a rf magnetron sputtering technique. The x-ray diffraction and energy-dispersive x-ray spectroscopy analysis results show that a MgO buffer serves well not only as a template layer for growing oriented PZT films on an amorphous surface but also as a diffusion barrier between PZT and Si substrates. The memory window of the MFIS structure was characterized with a capacitance-versus-voltage method. Numerical analyses were also carried out to simulate the MFIS capacitor characteristics. In this simulation, the PZT films were assumed to have a two-layer structure in which the dielectric and ferroelectric properties of an initial layer are significantly weaker ...