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We report on the dependence on field and temperature of the critical current of micro superconducting quantum interference devices (SQUIDs): SQUIDs with diameters as small as 1 µm using Dayem bridges as weak links. We model these SQUIDs by solving the Ginzburg-Landau equations with appropriate boundary conditions to obtain the supercurrent-phase relationships. These solutions show that the phase drops and depression of the order parameter produced by supercurrent flow are often distributed throughout the micro-SQUID structure, rather than being localized in the bridge area, for typical micro-SQUID geometries and coherence lengths. The resultant highly nonsinusoidal current-phase relationships I[sub c](ψ) lead to reduced modulation depths and triangular dependences of the micro-SQUID critical currents on applied magnetic flux I[sub c](φ). Our modeling agrees well with our measurements on both Al and Nb micro-SQUIDs. [ABSTRACT FROM AUTHOR]

Presents a study which conducted a noise spectroscopy of semiconductor deep level centers in gallium arsenide-aluminum[sub x]gallium[sub 1-x]arsenide heterostructures. Description of the model; Experiment; Results and discussion.

Discusses a study on electron heating in silicon dioxide and off-stoichiometric silicon dioxide films. Details on experimental techniques used in the study; Demonstration of the gradual heating of electronic carrier distributions; Treatment of the relationship of electron heating to electron trapping, positive charge generation, interface state creation and dielectric breakdown.

Presents information on a study that reported electroluminescence emission at room temperature from indium-tin-oxide and indium oxide films. Research method; Results and discussion on the study.