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For plasma window (PW) applications, we developed the cascade arc discharge device with an indirectly heated hollow cathode. The 8-mm channel diameter hollow cathode made of a lanthanum hexaboride (LaB 6) was heated by the C/C composite heater surrounding the cathode to increase the thermionic electron emission. The PW developed successfully separated 2.4 kPa and 16 Pa, and the pressure separation capability was sustained for over 1 h. H- β Stark broadening measurement and the Thomson scattering measurement showed that the electron density and temperature inside the channel reached 10 19 – 10 20 m − 3 and 2.0 eV, respectively. The power balance analysis on the electron thermal energy revealed that the neutral density and temperature inside the channel were as high as 10 23 m − 3 and 4000 K, respectively. The relation between the pressure separation capability and the neutral temperature showed that the flow inside the channel of the PW had the molecular flow feature. The SEM-EDX analysis on the LaB 6 cathode showed that boron diffused to the molybdenum (Mo) shaft during plasma operation, which supported the LaB 6 cathode. Mo shaft became brittle after more than 50 h of operation, exhibiting the necessity of buffer material between the LaB 6 cathode and Mo shaft for long-duration operation. [ABSTRACT FROM AUTHOR]

The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration. [ABSTRACT FROM AUTHOR]

The picosecond transient carrier response of InGaMnAs/InP was measured by two-color pump-probes spectroscopy, using an intense near-infrared beam as the pump and a 52.5 mu m (5.7 terahertz (THz)) beam as the probe. The calculations indicate that the nonexponential decays may be due to carrier dynamics associated with GAMMA-L intervalley scattering that becomes efficient when ferromagnetism modifies the band structure.

Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and reflectivity after NIR excitation. We systematically investigated transient carrier relaxation in GaAs and InSb with varying NIR intensities and magnetic fields. Using this information, we were able to determine the evolution of the THz absorption to study the dynamics of photocreated carriers. We developed a theory based on a Drude conductivity with time-dependent density and density-dependent scattering lifetime, which reproduced the observed plasma dynamics. Detailed comparison between experimental and theoretical results revealed a linear dependence of the scattering frequency on density, which suggests that electron–electron scattering is the dominant scattering mechanism for determining the scattering time. In InSb, plasma dynamics was dramatically modified by the application of a magnetic field, showing rich magnetoreflection spectra, while GaAs did not show any significant magnetic field dependence. We attribute this to the small effective masses of the carriers in InSb compared to GaAs, which made the plasma, cyclotron, and photon energies all comparable in the density, magnetic field, and wavelength ranges of the current study. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The performance of ultrahigh magnetic field cyclotron resonance experiments on p-type InAs and InMnAs is presented. The density dependence of the cyclotron resonance line shape can help one to determine the carrier densities.