Search

AlN thin films are enabling significant progress in modern optoelectronics, power electronics, and microelectromechanical systems. The various AlN growth methods and conditions lead to different film microstructures. In this report, phonon scattering mechanisms that impact the cross-plane (κz; along the c-axis) and in-plane (κr; parallel to the c-plane) thermal conductivities of AlN thin films prepared by various synthesis techniques are investigated. In contrast to bulk single crystal AlN with an isotropic thermal conductivity of ∼330 W/m K, a strong anisotropy in the thermal conductivity is observed in the thin films. The κz shows a strong film thickness dependence due to phonon-boundary scattering. Electron microscopy reveals the presence of grain boundaries and dislocations that limit the κr. For instance, oriented films prepared by reactive sputtering possess lateral crystalline grain sizes ranging from 20 to 40 nm that significantly lower the κr to ∼30 W/m K. Simulation results suggest that the self-heating in AlN film bulk acoustic resonators can significantly impact the power handling capability of RF filters. A device employing an oriented film as the active piezoelectric layer shows an ∼2.5× higher device peak temperature as compared to a device based on an epitaxial film. [ABSTRACT FROM AUTHOR]

In this study, the Raman biaxial stress coefficients KII and strain-free phonon frequencies ω0 have been determined for the E2 (low), E2 (high), and A1 (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E2 (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E2 (high) Raman biaxial stress coefficient of −3.8 cm−1/GPa and strain-free phonon frequency of 656.68 cm−1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ∼150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ∼20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ∼100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film. [ABSTRACT FROM AUTHOR]

The motion of domain walls in lead zirconate titanate (PZT) produces both nonlinearity and hysteresis. While measurements of the resulting self-heating under an electric field drive are well known in bulk ferroelectric ceramics, self-heating effects in PZT films may differ from those in bulk ceramics due to a combination of reduced domain wall motion, differences in heat dissipation associated with substrates or passive elastic layers, and differences in typical drive fields. Here, it is shown that the thermal imaging of the test structures of PZT piezoelectric microelectromechanical systems using techniques such as infrared thermography and thermoreflectance thermal imaging suffers from motion-induced artifacts. These limitations were overcome via nanoparticle-assisted Raman thermometry with a spatial resolution of ∼1 μm. To acquire the local temperature distribution quantitatively, anatase nanoparticles were distributed across the electrodes and actuating PZT diaphragm. The temperature rise of the test structures increased as the operating frequency, voltage amplitude, and slew rate increased. As expected, the largest temperature rises were induced due to self-heating associated with domain switching under bipolar operation. In addition, a higher voltage amplitude testing revealed non-uniform temperature distributions across the piezoelectric actuator, suggesting that AC Joule heating can induce significant heat generation (ΔT ∼ 30 K) under high electric fields (∼390 kV/cm). [ABSTRACT FROM AUTHOR]