Search

In Cr2O3 thin films doped with Al or Ir, we have discovered a parasitic magnetization, accompanied by the antiferromagnetic order, with tunable direction and magnitude. In this study, by utilizing the parasitic magnetization, the antiferromagnetic anisotropy KAF of the doped Cr2O3 thin films was evaluated. A much greater improvement of KAF was obtained for Al-doped Cr2O3 films than that of bulk. The maximum KAF in this study was ∼9 × 104 J/m3, obtained for the Al 3.7%-doped Cr2O3 film sample. The enhancement of the magnetic dipole anisotropy KMD due to the site-selective substitution is speculated for the dominant origin of the enhancement. Furthermore, based on the obtained KAF, the influence of the parasitic magnetization on the exchange bias blocking temperature TB of the doped-Cr2O3/Co exchange coupled system was discussed. TB greatly increases when the parasitic magnetization is coupled antiparallel to ferromagnetic moment, such as Al-doped Cr2O3/Co systems.

A combined analysis of Ir-doped α-Fe2O3 (001) films, which show a drastic enhancement in the Morin transition temperature as a result of Ir doping, was performed by employing X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS), and Mossbauer spectroscopy analyses at room temperature. The Mossbauer spectra reveal that the valency of Fe remains 3+ after Ir doping. The XANES spectra indicate that the valency of the Ir ion in Ir-doped α-Fe2O3 varies from 3+ to 4+. The EXAFS analysis results clarified that the Ir ions occupy the Fe-sites of α-Fe2O3. These findings help elucidate the mechanism for controlling the Morin transition temperature in α-Fe2O3 films toward antiferromagnetic spintronic applications.

Nano-contact magnetoresistance (NCMR) spin-valves (SVs) using an AlOx nano-oxide-layer (NOL) have numerous nanocontacts in the thin AlOx oxide layer. The NCMR theoretically depends on the bulk scattering spin asymmetry (β) of the ferromagnetic material in the nanocontacts. To determine the relationship between NCMR and β, we investigated the dependence of NCMR on the composition of the ferromagnetic material Co1−xFex. The samples were annealed at 270 °C and 380 °C to enhance the MR ratio. For both annealing temperatures, the magnetorsistance ratio in the low-resistance area product region at less than 1 Ω μm2 was maximized for Co0.5Fe0.5. To evaluate β exactly, we fabricated current-perpendicular-to-plane giant magnetoresistance SVs with Co1−xFex/Cu/Co1−xFex layers and used Valet and Fert's theory to solve the diffusion equation of the spin accumulation for a ferromagnetic layer/non-ferromagnetic layer of five layers with a finite diffusion length. The evaluated β for Co1−xFex was also maximized for Co0.5Fe0.5. Additionally, to determine the difference between the experimental MR ratio of NCMR SVs and the theoretical MR ratio, we fabricated Co0.5Fe0.5 with oxygen impurities and estimated the decrease in β with increasing oxygen impurity concentration. Our Co0.5Fe0.5 nano-contacts fabricated using ion-assisted oxidation may contain oxygen impurities, and the oxygen impurities might cause a decrease in β and the MR ratio.

We investigated the saturation magnetostriction (λs) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, λs becomes positively large; on the other hand, λs becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where λs is changed by the film strain. The λs sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe λs becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film.

The concept of spin-filter spin-valve (SFSV) films is reviewed. The dependence of the free layer structure on the spin-filter effect was investigated by using model films and two types of free layers were compared, a single CoFe layer and a conventional NiFe/Co free layer. At the same magnetic thickness of the free layer, the SFSV films with a CoFe free layer showed a larger magnetoresistance (MR) ratio than those with a NiFe/Co free layer. This is partly attributed to the thinner CoFe free layer thickness, which is due to the fact that the CoFe free layer has higher Bs than the NiFe/Co free layer. Moreover, SFSV films with a CoFe free layer still showed a larger MR ratio when the free layer thickness was the same. It suggests that other factors contribute to the high MR performance, such as the quality of the interface between a free layer and a high conductance layer. Film performance of MR 9% to 10%, ΔRs 1.5–2.0 Ω, Hcea∼3 Oe, and λs⩽±0.5 ppm was obtained with a single CoFe free layer and synthetic anti...

Neutron-diffraction measurements were made on an ordered Mn3Ir single crystal in a wide temperature range up to 1030 K. The ordered Mn3Ir alloy was found to maintain an antiferromagnetic (AF) triangular spin structure up to the Neel temperature TN=960±10 K. The lattice parameter a shows a continuous change in the temperature range including TN. In contrast to the isostructural ordered Mn3Pt alloy, these observations indicate that an AF–AF phase transition is absent in the ordered Mn3Ir alloy.

We have reported that body-centered-cubic (bcc) Fe50Co50 with ultrathin Cu layers has large spin-dependent bulk scattering and enhances AΔR of spin valves. In order to clarify the role of Cu, two series of samples with (Fe50Co50 1 nm/Cu)×5 were prepared by two different sputtering machines. Machine A has a high rate, and machine B has a comparatively low rate. Both of AΔR in series A and B are increased by inserting thin Cu of about 0.1 nm, but they have a significant difference in Cu thickness dependence. While series A keeps high AΔR through the Cu thickness, AΔR in series B decreases when Cu is thickened. In order to find the reason for the difference, we took the extended x-ray absorption structure (EXAFS) spectra. By comparing AΔR and EXAFS, it was found that the very thin Cu of about 0.1 nm in Fe50Co50 takes a body-centered-cubic bcc structure, namely a solid solution state. Cu of 1 nm in spin valves with high AΔR takes a bcc and face-centered-cubic (fcc) evenly, and that with a low AΔR is a fcc str...

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ∼19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

The structural properties and Morin transition in c-plane-oriented α-Fe2O3 and Ir-doped α-Fe2O3 thin films have been investigated. The enhancement of the Morin transition temperature (TM) in α-Fe2O3 film by Ir doping has been demonstrated. The TM in the c-plane-oriented α-Fe2O3 thin film was determined from the temperature-dependent in-plane magnetization and change of coercivity (Hc); this TM value was found close to that of bulk α-Fe2O3. The spin directions of non-doped and Ir-doped α-Fe2O3 at room temperature were also estimated from conversion electron Mossbauer spectroscopy measurements. We confirmed that Ir doping dramatically enhances the TM of α-Fe2O3 thin film.

The (001)-oriented and (110)-oriented epitaxial grown Co2Fe0.4Mn0.6Si films were fabricated by magnetron sputtering technique in order to investigate the annealing temperature dependence of the intrinsic Gilbert damping constant ( α). The stuck films, deposited on MgO and Al2O3 a-plane substrates, respectively, were annealed at various temperatures ranging from 400 °C to 550 °C. The X-ray diffraction analysis was conducted to confirm that all the films were epitaxially grown. In addition, the ferromagnetic resonance measurements as well as the vibrating sample magnetometer were carried out to determine their magnetic properties. A small α of 0.004 was recorded for the sample with 001-oriented Co2Fe0.4Mn0.6Si (CFMS (001)) and 110-oriented CFMS (CFMS (110)) annealed at 450 °C.

The lattice parameter dependence of the Neel temperature TN of thin Cr2O3 in a Cr2O3/Co exchange-coupled system is investigated. Lattice-mismatch-induced strain is generated in Cr2O3 by using different buffer layers. The lattice parameters are determined from out-of-plane and in-plane X-ray diffraction measurements. The Neel temperature is detected by direct temperature-dependent magnetization measurement as well as the temperature-dependent interface exchange coupling energy. It is observed that in-plane lattice contraction can enhance TN in Cr2O3, which is consistent with theoretical calculations.

We succeeded in developing CoFe spin valves with an antiferromagnetic Ir-Mn film. Ir-Mn single-layer films and spin valves of Ta(5 nm)/Ir-Mn(8 or 9 nm)/Co90Fe10(x nm)/Cu(3 nm)/Co90Fe10(3 nm)/NiFe(2 nm)/CoZrNb(10 nm)/ (x=2, 2.3, 2.6 nm), prepared by the sputtering method, showed the crystal structure of a fcc (111) preferred orientation. As-deposited CoFe spin valves with Ir-Mn exhibited an interfacial exchange coupling energy of J=0.192 erg/cm2 (Hua∼640 Oe at tCoFe=2 nm), that was the highest ever reported for as-deposited antiferromagnetic films, such as NiO, NiMn, and FeMn. Furthermore, CoFe spin valves with Ir-Mn exhibited a higher blocking temperature of 260 °C, and a higher MR ratio of 6.37% than the spin valves with FeMn film. After annealing, the MR ratio increased to 7.82%. On the other hand, the Hua decreased about 100 Oe after annealing. The Hua-T curve was, however, improved and the Hua at 100 °C increased to 400 Oe. The decrease in Hua was not observed after second annealing and seems to be st...

The magnetic properties and magnetostriction in grain‐oriented (TbxDy1−x)(Fe1−yMny)1.95 compounds with 0.3≤x≤0.5, 0≤y≤0.2 prepared by the Bridgman method have been investigated. It is confirmed that the Mn substitution not only lowers the spin reorientation temperature but also enhances λ〈100〉. This large λ〈100〉 is contradictory to the single‐ion model. For Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 compound, no spin reorientation, which induces the sharp drop in the magnetostriction is seen in the temperature range from 77 to 400 K. In addition, by choosing the appropriate compressive stress, the quite excellent thermal stability and the large magnetostriction of 2000 ppm in the low applied field can be realized in the Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 compound. These features make Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 a promising material applicable to the various giant magnetostrictive actuators.

A perpendicular magnetic tunnel junction (pMTJ) device was fabricated using L10 ordered FePt electrodes, which were deposited on MgO(8 nm)/CrRu(10 nm)/TiN(4 nm) under-layers. It was found that the MgO/CrRu/TiN under-layer helps lower the required FePt deposition temperature to below 400 °C, and provides a well-ordered bottom L10 FePt electrode with root-mean-square (RMS) surface roughness close to 0.4 nm. Magnetoresistance (MR) ratio and resistance-area (RA) were measured at room temperature by the current-in-plane tunneling (CIPT) method from a lithographically unpatterned PMTJ sample and 138% and 6.4 kΩ μm2 were obtained, respectively. A PMTJ test pattern, with a junction size of 80 × 40 μm2, was also fabricated and showed a MR ratio and RA product of 108% and 4 ∼ 6 kΩ μm2, respectively, in good agreement with the CIPT measurements.

In this study, we fabricated a Cr2O3 (0001) film without and with a Pt buffer layer and investigated its effect on perpendicular exchange coupling in a Cr2O3/Co3Pt interface. The results showed that the exchange bias field (μ0Hex) and blocking temperature (TB) of a Cr2O3 film without and with Pt were very different. The Cr2O3 film without Pt had a lower μ0Hex of 176 Oe and a lower TB of 75 K, whereas that with Pt had a higher μ0Hex of 436 Oe and a higher TB of 150 K. We discussed this difference in μ0Hex and TB values based on collinear/non-collinear coupling in a ferromagnetic and antiferromagnetic interface using Meiklejohn and Bean's exchange anisotropy model.

Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co3Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 °C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 Ω cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co3Pt surface oxidation was discussed.

The bulk and interface spin scattering asymmetric coefficients, βF and γF/N, respectively, as well as the interfacial specific resistance, AR*F/N, contribute to the total resistance change-area product, ΔRA, in current-perpendicular-to-plane (CPP) geometry. In this paper, we report the effect of the insertion of a 1 nm Fe layer into ferromagnetic (F)/non-ferromagnetic (N) interfaces on the spin dependent transport properties. Using the Valet-Fert theory based on the two-current model in which ΔRA is obtained as a function of thicknesses of the ferromagnetic layer (3, 4, and 5 nm), we experimentally deduced the values of βF, γF/N, and AR*F/N of exchange-biased spin valves (EBSVs) for an artificially ordered B2 state Fe50Co50 alloy as a magnetic layer and an Ag spacer layer.

Using current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) measurement, we have evaluated the bulk and interface spin scattering asymmetric coefficients, βF and γF/N and the specific interfacial resistance, AR*F/N, for exchange-biased spin-valves consisting of artificially ordered B2 structure Fe50Co50 and Ag spacer layer. Artificially epitaxial ordered Fe50Co50 superlattices have been successfully fabricated on MgO (001) substrate by alternate monatomic layer (AML) deposition at a substrate temperature of 75 °C. The structural properties of the full epitaxial trilayer, AML[Fe/Co]n/Ag/AML[Fe/Co]n, on the Ag electrode have been confirmed by in situ reflection high-energy electron diffraction and transmission electron diffraction microscopy. A considerably large resistance-area product change and MR ratio (ΔRA > 3 mΩμm2 and MR ratio ∼5%) were confirmed even at thin AML[Fe/Co]n layer at room temperature (RT) in our spin-valve elements. The estimated values of βF and γF/N were 0.80 and 0.84 ± 0....

We investigated the spin-transfer torque driven ferromagnetic resonance in nano-contact magnetoresistive (NCMR) devices with a current-perpendicular-to-plane spin-valve structure consisting of a FeCo layer, a FeCo-AlOx nano-oxide layer, a FeCo multilayer for the reference, a spacer, and free layers. In contrast with tunneling magnetoresistance devices with an AlOx spacer layer that shows a single resonant frequency, NCMR devices showed multi-resonant frequencies caused by free-layer resonance and other types of resonance appeared in a frequency region higher than that of the free-layer. We discuss these characteristic results in terms of the magnetic structure of the NCMR device, especially the free and reference layers around the nano-contacts.

Exchange bias from antiferromagnetic (AFM) oxides with a magnetoelectric (ME) effect has been studied for controlling ferromagnetic (FM) magnetizations by an applying electric field. However, thick ME oxides are needed for realizing the electrically controlled exchange biasing. Therefore, in this study the temperature dependencies of the training effect for the Cr2O3-nano-oxide-layer (NOL) are investigated for confirming the ME effect of the Cr2O3-NOL. The anomalous temperature tendencies of system dependent constant for exchange bias and magnetoresistance (MR), κHex and κMR, were observed, which are probably originated from the ME effect of the Cr2O3-NOL because (1) these anomalous temperature tendencies could not be obtained in the CoO-NOL spin valve and (2) the κHex and κMR are defined as the strength of the coupling between FM and AFM spins. It is remarkable result for us to confirm the possibility of the ME effect from the ultrathin Cr2O3 layer (less than 1 nm) because the ME effect was observed in o...

Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich–Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing.

We have developed the FeCo nanocontact magnetoresistance (NCMR) with spin-valve structure [H. N. Fuke et al., IEEE Trans. Magn. 43, 2848 (2007)] which exhibits up to a MR ratio of 11%–12% at a resistance area (RA) of 0.3–0.55 Ω μm2. The nanocontact configurations were estimated at about 2 nm in in-plane diameter, 1.2 nm in thickness, and 0.55% in density for a RA∼0.5 Ω μm2 film based on in-plane current distribution by conductive atomic-force microscopy cross sectional transmission electron microscope images of the NCMR. The origin of the NCMR was discussed by comparing magnetic field dependence of resistance, with micromagnetics simulation based on the diffusive MR theory. It is found that our NCMR cannot be explained by diffusive domain wall theory or bulk scattering in free and pinned layers. It is likely that a theory on the basis of a ballistic MR consideration is needed to interpret our MR origin.

We have investigated the microwave oscillations due to a spin transfer effect induced by direct current in ferromagnetic nanocontact magnetoresistive (NCMR) elements with a current-perpendicular-to-plane spin-valve structure consisting of an FeCo/FeCo–AlOx nano-oxide layer/FeCo multilayer for the reference/spacer/free layers, respectively. Characteristic microwave oscillations were observed in the NCMR elements at different magnetization states induced by the application of a spin-polarized current, which are considered to be related to the introduction of a ferromagnetic NC to spacer layer (large interlayer coupling) and the resonance concerning the stability of the magnetization states of the free and reference layers around the NCs. A marvelously narrow full width at half maximum (FWHM) of l0–20 MHz is observed under a high applied magnetic field where the reference layer magnetization is slightly off axis relative to the pinned direction. By contrast, a wider FWHM of 80–600 MHz is observed at the magn...

For the structural characterization of a Co100−xFex nano-oxide layer (NOL), the exchange bias properties of the Co100−xFex-natural oxidized NOL in the specular spin-valve (SPSV) system were investigated. The exchange bias energy (Jex) increased monotonically with the increasing Fe content for the Co100−xFex-NOL. The enhancement of both the magnetoresistance ratio and the exchange bias field (Hex) was realized by increasing the Fe content in the Co100−xFex-NOL. It should be mentioned that Hex more than 800Oe is obtained by the insertion of Co30Fe70-NOL, even in NOL-SPSV, which is a remarkably higher pinning field than that ever reported on IrMn-SV. This high exchange bias field is considered to be realized by the formation of an Fe-rich fcc phase at the interface of IrMn.

The current-perpendicular-to-plane (CPP) giant-magnetoresistance (GMR) of spin valves with Fe50Co50 alloy was investigated. It has been reported that the Cu inserted in Fe50Co50 is effective for enhancing CPP-GMR. In this paper, we investigated the number of Cu lamination effect on CPP-GMR and clarified that higher CPP-GMR is obtained by decreasing the number of Cu layers. In order to ascertain the reason for this tendency, the crystalline structure and magnetization were examined. As a result, it was found that the d spacing of Fe50Co50 increases when the number of Cu layers is increased, although saturation magnetization does not change.

We compared the specular spin-valve films with an Fe50Co50 nano-oxide layer (NOL) and a Co90Fe10 NOL in a pinned layer, prepared by natural oxidation (NO) and ion-assisted oxidation (IAO). For the IAO, an Ar-ion beam was used for the energy-assist effect during the oxidation, resulting in thermally stable NOL formation. With small oxygen exposures during the oxidation for the Fe50Co50 NOL by IAO, good ferromagnetic coupling through the NOL and high specularity at the NOL interface were concurrently obtained. Moreover, twisted coupling through the NOL was observed for the Fe50Co50 NOL by IAO for higher oxygen exposures. On the other hand, the NO did not cause large magnetoresistance (MR) enhancement for either the Co90Fe10 or Fe50Co50 NOLs, and the Co90Fe10 NOL by IAO caused weak magnetic coupling through the NOL, resulting in a small MR ratio. The Fe50Co50 NOL for small oxygen exposures is a good candidate for a final specular spin-valve film head for 100-Giga-bit per square inch recording.

The structural and magnetic properties of (R,Zr)(Fe,Co)10(R=Nd,Sm) prepared by the rapid‐quenching method have been investigated. The presence of zirconium makes it possible to realize a TbCu7‐type crystal structure with a high c/a ratio of more than 0.87, while the same crystal structure has a c/a ratio of just 0.84–0.85 in the zirconium‐free case. The saturation magnetization of crystals having such a high c/a ratio as 0.87 exceeds 1.7 T at room temperature. These materials can be nitrogenated, and remarkable enhancement of magnetocrystalline anisotropy by nitrogenation can be seen in the case of Sm. The magnetic hardening of these nitrogenated materials can be achieved by annealing before nitrogenation. The highest value of (BH)max obtained so far for the nitrogenated materials is 144 kJ/m3 (18.0 MGOe). The iHc and Br values for this sample are 503 kA/m (6.3 kOe) and 1.08 T, respectively.

Spin‐valve structures with a magnetic material buffer layer, CoNbZr/NiFe/Co90Fe10/Cu/Co90Fe10/Fe50Mn50, were prepared on a oxidized Si substrate. From x‐ray diffraction analysis, it was shown that the CoNbZr/NiFe buffer layer enhances the fcc (111) orientation of the spin‐valve structure on oxidized Si. After annealing, the giant magnetoresistance (GMR) ratio of Δρ/ρ=8% and the soft magnetic properties of Hc=0.1 Oe and Hk=2.8 Oe were obtained. The sensitivity of GMR, Δ(Δρ/ρ)/ΔH, of 1.4%/Oe is achieved.

We have found that a NdFeCoGaB sintered magnet containing 30 at. % Co still shows high coercive force in spite of such a large amount of Co substitution. The Curie temperature of the magnet is higher than that of the ternary NdFeB magnet by 280 °C. As a result, the following magnetic properties have been attained for Nd14.5Fe46Co30Ga1B8.5: Tc=590 °C, Br =11.7 kG, Hci =14.3 kOe, and (BH)max=32 MG Oe. Furthermore, in this magnet there exists an additional phase, Nd1(FeCoGa)4B1 with Ce1Co4B1 structure, which, as far as authors know, has not been reported to exist in the NdFeB‐based magnets. In this study we investigated the magnetic properties and microstructure of Nd14.5Fe76−xCoxGa1B8.5 (x=16–50) sintered magnets. The high coercive force can be obtained in the Co‐content region from 16 to 30 at. %. In particular, the magnet with 30 at. % Co shows coercive force as high as 14.3 kOe. However, further substitution of Co drastically deteriorates the magnetic properties. The coercive force of the magnet with 50 ...

A complex new magnetic refrigerant, suitable for the ideal Ericsson cycle, has been investigated. Above ∼15 K it is necessary to use ferromagnets as a magnetic refrigerant. However, temperature variation for the magnetic entropy change in a homogeneous ferromagnet is not suitable for the Ericsson cycle. The present paper verifies, from theoretical analysis, that a complex ferromagnetic material, for instance, (ErAl2)0.312(HoAl2)0.198 (Ho0.5Dy0.5Al2)0.490, has the most suitable characteristics for the ideal Ericsson cycle, including two kinds of isomagnetic field processes. On the basis of the above consideration, a sintered layer structural complex has been prepared, composed of three kinds of RAl2.15 layers, where R’s are rare‐earth atoms. From specific heat measurements made on this complex, its entropy and entropy change have been determined. It has been concluded that the complex magnetic material is the most hopeful refrigerant for the Ericsson cycle.